Silicon Power Transistors 2SA1307 DESCRIPTION With TO-220Fa

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Silicon Power Transistors 2SA1307 DESCRIPTION With TO-220Fa

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Silicon Power Transistors
2SA1307
DESCRIPTION With TO-220Fa package Complement type 2SC3299 saturation voltage High speed switching time APPLICATIONS High current switching applications
PINNING DESCRIPTION Emitter Collector Base
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO PARAMETER
Collector-base voltage
INCH
Base current
Collector-emitter voltage Emitter-base voltage Collector current
EMIC
Open emitter Open base Open collector
CONDITIONS
VALUE
UNIT
TC=25 Collector power dissipation Ta=25 Tstg Junction temperature Storage temperature
-55~150
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Output capacitance Transition frequency CONDITIONS IC=-10mA IB=0 IC=-3A; IB=-0.15A IC=-3A; IB=-0.15A VCB=-50V;IE=0 VEB=-5V; IC=0 IC=-1A VCE=-1V IC=-3A VCE=-1V IE=0; VCB=-10V,f=1MHz IC=-1A VCE=-4V
2SA1307
TYP.
UNIT
-0.4 -1.2 -1.0 -1.0
Switching times
Turn-on time Storage time Fall time
120-240
hFE-1 Classifications 70-140
IB1=-IB2=-0.15A,VCC=30V RL=10
Silicon Power Transistors
PACKAGE OUTLINE
2SA1307
Fig.2 Outline dimensions (unindicated tolerance:±0.15
Silicon Power Transistors
2SA1307

Silicon Power Transistors 2SA1307 DESCRIPTION With TO-220Fa

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