Silicon Power Transistors 2SA1304 DESCRIPTION TO-220Fa packa
|
|
|
Top Searches for this datasheet
Silicon Power Transistors
2SA1304
DESCRIPTION TO-220Fa package type 2SC3296 breakdown voltage APPLICATIONS amplifier applications output applicatios
PINNING DESCRIPTION Emitter Collector Base
Absolute maximum ratings(Tc=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current TC=25
CONDITIONS Open emitter Open base Open collector
VALUE -150 -150 -1.5 -0.5
UNIT
Collector power dissipation Ta=25 -55~150
Tstg
Junction temperature Storage temperature
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SA1304
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA IB=0
-150
VCEsat
Collector-emitter saturation voltage
IC=-500mA; IB=-50mA
-1.5
Base-emitter voltage
IC=-500mA VCE=-10V
-0.85
ICBO
Collector cut-off current
VCB=-120V;IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
current gain
IC=-500mA VCE=-10V
Output capacitance
IE=0; VCB=-10V,f=1MHz
Transition frequency
IC=-500mA VCE=-10V
Silicon Power Transistors
PACKAGE OUTLINE
2SA1304
Fig.2 Outline dimensions (unindicated tolerance:±0.15
Silicon Power Transistors
2SA1304
Other recent searches
XAPP615 - XAPP615 XAPP615 Datasheet
Quantization - Quantization Quantization Datasheet
SWFP3141-13-1 - SWFP3141-13-1 SWFP3141-13-1 Datasheet
SA305 - SA305 SA305 Datasheet
PT7M8411 - PT7M8411 PT7M8411 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
