Silicon Power Transistors 2SA1293 DESCRIPTION TO-220 package
|
|
|
Top Searches for this datasheet
Silicon Power Transistors
2SA1293
DESCRIPTION TO-220 package type 2SC3258 collector saturation voltage speed switching time APPLICATIONS current switching applications
PINNING Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-220) symbol DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ,IB=0 IC=-3A; IB=-0.15A IC=-3A; IB=-0.15A VCB=-100V; IE=0 VEB=-7V; IC=0 IC=-1A VCE=-1V IC=-3A VCE=-1V IE=0 VCB=-10V;f=1MHz IC=-1A VCE=-4V
2SA1293
TYP.
UNIT
-0.2 -0.9
-0.4 -1.2
Switching times Turn-on time Storage time Fall time IB1=- IB2=-0.15A RL=10;VCC30V
hFE-1 Classifications 70-140 120-240
Silicon Power Transistors
PACKAGE OUTLINE
2SA1293
Fig.2 Outline dimensions(unindicated tolerance:±0.10
Silicon Power Transistors
2SA1293
Other recent searches
VND5E025AK-E - VND5E025AK-E VND5E025AK-E Datasheet
SSM9564GM - SSM9564GM SSM9564GM Datasheet
SS5188 - SS5188 SS5188 Datasheet
QB-80GC-YQ-01T - QB-80GC-YQ-01T QB-80GC-YQ-01T Datasheet
G7150 - G7150 G7150 Datasheet
G7151-16 - G7151-16 G7151-16 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
