Silicon Power Transistors 2SA1292 DESCRIPTION TO-3PN package
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Silicon Power Transistors
2SA1292
DESCRIPTION TO-3PN package saturation voltage. switching time. type 2SC3256 APPLICATIONS inductance, lamp drivers electrical equipment. converters amplifier switching
PINNING Base Collector;connected mounting base Emitter Fig.1 simplified outline (TO-3PN) symbol DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat ICBO IEBO PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain Transition frequency CONDITIONS IC=-1mA ,IE=0 IC=-1mA ,IB=0
2SA1292
TYP.
UNIT
IE=-1mA ,IC=0 IC=-7.5A; IB=-0.375A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-1A VCE=-2V IC=-1A VCE=-5V
-0.4 -100 -100
Switching times Turn-on time Storage time Fall time IC=-6A IB1=- IB2=-0.3A VCC=-20V;RL=3.3
Classifications 70-140 100-200 140-280
Silicon Power Transistors
PACKAGE OUTLINE
2SA1292
Fig.2 Outline dimensions(unindicated tolerance:±0.10
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