Silicon Power Transistors 2SA1290 DESCRIPTION TO-220 package
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Silicon Power Transistors
2SA1290
DESCRIPTION TO-220 package switching time collector saturation voltage type 2SC3254 APPLICATIONS inductance lamp drivers electrical equipment amplifier regulator ,driver
PINNING DESCRIPTION Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-220) symbol
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain Transition frequency CONDITIONS IC=-1mA ,RBE= IC=-1mA ,IE=0 IE=-1mA ,IC=0 IC=-3.5A; IB=-0.175A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-1A VCE=-2V IC=-1A VCE=-5V TYP.
2SA1290
UNIT
-0.4 -100 -100
Switching times tstg Turn-on time Storage time Fall time VCC=-20V; IC=-3A IB1=-IB2=-0.15A;RL=6.67
Classifications 70-140 100-200 140-280
Silicon Power Transistors
PACKAGE OUTLINE
2SA1290
Fig.2 Outline dimensions(unindicated tolerance:±0.10
Silicon Power Transistors
2SA1290
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