Silicon Power Transistors 2SA1308 DESCRIPTION TO-220F packag
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Silicon Power Transistors
2SA1308
DESCRIPTION TO-220F package collector saturation voltage APPLICATIONS current switching applications
PINNING Base Collector Emitter Fig.1 simplified outline (TO-220F) symbol DESCRIPTION
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SA1308
TYP.
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA IB=0
-100
VCEsat
Collector-emitter saturation voltage
IC=-3A;IB=-0.15A
-0.4
VBEsat
Base-emitter saturation voltage
IC=-3A;IB=-0.15A
-1.2
ICBO
Collector cut-off current
VCB=-100V;IE=0
IEBO
Emitter cut-off current
VEB=-7V; IC=0
hFE-1
current gain
IC=-1A VCE=-1V
hFE-2
current gain
IC=-3A VCE=-1V
Transition frequency
IC=-1A VCE=-4V
Output capacitance
IE=0 VCB=-10V;f=1MHz
Silicon Power Transistors
PACKAGE OUTLINE
2SA1308
Fig.2 Outline dimensions
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