Silicon Power Transistors 2SA1276 DESCRIPTION TO-220 package
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Silicon Power Transistors
2SA1276
DESCRIPTION TO-220 package type 2SC3230 linearity APPLICATIONS purpose applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-220) symbol
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current current gain current gain Transition frequency Output capacitance CONDITIONS IC=-10mA ,IB=0 IE=-1mA ,IC=0 IC=-2A; IB=-0.2A IC=-0.5A VCE=-2V VCB=-20V; IE=0 VEB=-5V; IC=0 IC=-0.5A VCE=-2V IC=-2.5A VCE=-2V IC=-0.5A VCE=-2V IE=0 VCB=10V;f=1MHz -0.3
2SA1276
TYP.
UNIT
-0.8 -1.0 -1.0 -1.0
-0.75
hFE-1 Classifications 70-140 120-240
Silicon Power Transistors
PACKAGE OUTLINE
2SA1276
Fig.2 Outline dimensions(unindicated tolerance:±0.10
Silicon Power Transistors
2SA1276
Silicon Power Transistors
2SA1276
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