Silicon Power Transistors 2SA1265N DESCRIPTION TO-3P(I) pack
|
|
|
Top Searches for this datasheet
Silicon Power Transistors
2SA1265N
DESCRIPTION TO-3P(I) package type 2SC3182 with short APPLICATIONS amplifier applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-3P(I)) symbol
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector
CONDITIONS
VALUE -140 -140 -55~150
UNIT
Tstg
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SA1265N
TYP.
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ,IB=0
-140
VCEsat
Collector-emitter saturation voltage
IC=-7A; IB=-0.7A IC=-5A VCE=-5V
-0.8
-2.0
Base-emitter voltage
-1.0
-1.5
ICBO
Collector cut-off current
VCB=-140V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
current gain
IC=-1A VCE=-5V
hFE-2
current gain
IC=-5A VCE=5V
Transition frequency
IC=-1A VCE=-5V IE=0 VCB=10V ;f=1MHz
Output capacitance
hFE-1 Classifications 55-110 80-160
Silicon Power Transistors
PACKAGE OUTLINE
2SA1265N
Fig.2 Outline dimensions(unindicated tolerance:±0.10
Silicon Power Transistors
2SA1265N
Other recent searches
TCMD1000 - TCMD1000 TCMD1000 Datasheet
TCMD4000 - TCMD4000 TCMD4000 Datasheet
SST25VF064C - SST25VF064C SST25VF064C Datasheet
SST25VF032B32Mb - SST25VF032B32Mb SST25VF032B32Mb Datasheet
PT67-21C - PT67-21C PT67-21C Datasheet
LT1372 - LT1372 LT1372 Datasheet
LT1377 - LT1377 LT1377 Datasheet
D815EEA - D815EEA D815EEA Datasheet
BD746 - BD746 BD746 Datasheet
BD746A - BD746A BD746A Datasheet
BD746B - BD746B BD746B Datasheet
BD746C - BD746C BD746C Datasheet
BD745 - BD745 BD745 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
