Silicon Power Transistors 2SA1264N DESCRIPTION TO-3P(I) pack
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Silicon Power Transistors
2SA1264N
DESCRIPTION TO-3P(I) package type 2SC3181N with short APPLICATIONS amplifier applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-3P(I)) symbol
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector
CONDITIONS
VALUE -120 -120 -0.8 -55~150
UNIT
Tstg
Silicon Power Transistors
2SA1264N
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ,IB=0
-120
VCEsat
Collector-emitter saturation voltage
IC=-6A; IB=-0.6A IC=-4A VCE=-5V
-2.0
Base-emitter voltage
-1.5
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
current gain
IC=-1A VCE=-5V
hFE-2
current gain
IC=-4A VCE=-5V
Transition frequency
IC=-1A VCE=-5V IE=0 VCB=-10V ;f=1MHz
Output capacitance
hFE-1 Classifications 55-110 80-160
Silicon Power Transistors
PACKAGE OUTLINE
2SA1264N
Fig.2 Outline dimensions(unindicated tolerance:±0.10
Silicon Power Transistors
2SA1264N
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