Silicon Power Transistors 2SA1263N DESCRIPTION TO-3P(I) pack
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Silicon Power Transistors
2SA1263N
DESCRIPTION TO-3P(I) package type 2SC3180N with short APPLICATIONS amplifier applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Fig.1 simplified outline (TO-3P(I)) symbol Base
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25
CONDITIONS Open emitter Open base Open collector
VALUE -0.6 -55~150
UNIT
Tstg
Silicon Power Transistors
2SA1263N
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current current gain current gain Transition frequency Output capacitance CONDITIONS IC=-50mA ,IB=0 IC=-5A; IB=-0.5A IC=-3A VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A VCE=-5V IC=-3A VCE=-5V IC=-1A VCE=-5V IE=0 VCB=-10V ;f=1MHz -1.0 -0.95 -2.0 -1.5 TYP. UNIT
hFE-1 Classifications 55-110 80-160
Silicon Power Transistors
PACKAGE OUTLINE
2SA1263N
Fig.2 Outline dimensions(unindicated tolerance:±0.10
Silicon Power Transistors
2SA1263N
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