Silicon Power Transistors 2SA1262 DESCRIPTION TO-220 package
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Silicon Power Transistors
2SA1262
DESCRIPTION TO-220 package type 2SC3179 APPLICATIONS general purpose
PINNING DESCRIPTION Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-220) symbol
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector
CONDITIONS
VALUE -55~150
UNIT
Tstg
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain Transition frequency Output capacitance CONDITIONS IC=-25mA ,IB=0 IC=-2A; IB=-0.2A VCB=-60V; IE=0 VEB=-6V; IC=0 IC=-1A VCE=-4V IE=0.2A VCE=-12V IE=0 VCB=-10V ;f=1MHz
2SA1262
TYP.
UNIT
-0.6 -100 -100
Switching times Turn-on time Storage time Fall time IC=-2A ;IB1=- IB2=-0.2A RL=10;VCC=-20V 0.25 0.75 0.25
Silicon Power Transistors
PACKAGE OUTLINE
2SA1262
Fig.2 Outline dimensions(unindicated tolerance:±0.10
Silicon Power Transistors
2SA1262
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