Silicon Power Transistors 2SA1261 DESCRIPTION TO-220 package
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Silicon Power Transistors
2SA1261
DESCRIPTION TO-220 package switching speed collector saturation voltage type 2SC3157 APPLICATIONS high voltage ,high speed power switching applications PINNING
Emitter Collector Base Fig.1 simplified outline (TO-220) symbol DESCRIPTION
ABSOLUTE MAXIMUM RATINGS (TC=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Ta=25 Open emitter Open base
CONDITIONS
VALUE -100 -100 -3.5
UNIT
Open collector
Total power dissipation TC=25 -55~150
Tstg
Junction temperature Storage temperature
Silicon Power Transistors
2SA1261
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current current gain current gain current gain CONDITIONS IC=-5A ;IB1=-0.5A;L=1mH IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-100V; IE=0 VCE=-100V; VBE=-1.5V Ta=125 VEB=-5V; IC=0 IC=-0.5A VCE=-5V IC=-3A VCE=-5V IC=-5A VCE=-5V -100 -0.6 -1.5 -0.01 -0.01 -1.0 -0.01 TYP. UNIT
Switching times Turn-on time Storage time Fall time IC=-5A;IB1=-IB2=-0.5A RL=10;VCC=-50V
hFE-2 classifications 40-80 60-120 100-200
Silicon Power Transistors
PACKAGE OUTLINE
2SA1261
Fig.2 Outline dimensions (unindicated tolerance:±0.10
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