Silicon Power Transistors 2SA1249 DESCRIPTION TO-126 package
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Silicon Power Transistors
2SA1249
DESCRIPTION TO-126 package type 2SC3117 breakdown voltage current capacity APPLICATIONS color sound output,converters, Inverters applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25 Collector power dissipation TC=25 Tstg Junction temperature Storage temperature -55~150 CONDITIONS Open emitter Open base Open collector VALUE -180 -160 -1.5 -2.5 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain Transition frequency Output capacitance CONDITIONS IC=-1mA; RBE= IC=-10A; IE=0 IE=-10A IC=0 IC=-500mA; IB=-50mA
2SA1249
TYP. -160 -180 -0.2 -0.85
UNIT
-0.5 -1.2 -1.0 -1.0
IC=-500mA; IB=-50mA
VCB=-120V; IE=0 VEB=-4V; IC=0 IC=-100mA VCE=-5V IC=-10mA VCE=-5V IC=-50mA VCE=-10V IE=0 VCB=-10V;f=1MHz
hFE-1 Classifications 100-200 140-280 200-400
Silicon Power Transistors
PACKAGE OUTLINE
2SA1249
Fig.2 Outline dimensions
Silicon Power Transistors
2SA1249
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