Silicon Power Transistors 2SA1227 2SA1227A DESCRIPTION TO-3P
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Silicon Power Transistors
2SA1227 2SA1227A
DESCRIPTION TO-3PFa package type 2SC2987/2987A power dissipation APPLICATIONS audio frequency power amplifier applications
PINNING Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL PARAMETER 2SA1227 VCBO Collector-base voltage 2SA1227A 2SA1227 VCEO Collector-emitter voltage 2SA1227A VEBO Tstg Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -160 -55~150 Open emitter -160 -140 CONDITIONS VALUE -140 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SA1227 2SA1227A
TYP.
UNIT
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
-0.8
-1.5
VBEsat ICBO
Base-emitter saturation voltage
IC=-5A ;IB=-0.5A
-1.5
-2.0
Collector cut-off current
VCB=-140V; IE=0
IEBO
Emitter cut-off current
VEB=-3V; IC=0
hFE-1
current gain
IC=-2A VCE=-5V
current gain
IC=-5A VCE=-5V
Output capacitance
IE=0 VCB=-10V;f=1MHz
Transition frequency
IC=-1A VCE=-5V
hFE-1 classifications 60-120 100-200 160-320
Silicon Power Transistors
PACKAGE OUTLINE
2SA1227 2SA1227A
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
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