Silicon Power Transistors 2SA1217 DESCRIPTION TO-126 package
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Silicon Power Transistors
2SA1217
DESCRIPTION TO-126 package type 2SC2877 linearity APPLICATIONS frequency power amplifier speed switching output stage watts radio stereo
PINNING DESCRIPTION Emitter Collector;connected mounting base Base
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector
CONDITIONS
VALUE -55~150
UNIT
Tstg
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current current gain current gain Transition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-2.0A; IB=-0.2A IC=-0.5A VCE=-2V VCB=-40V; IE=0 VEB=-5V; IC=0 IC=-0.5A VCE=-2V IC=-2.5A VCE=-2V IC=-0.5A VCE=-2V f=1MHz VCB=-10V;IE=0
2SA1217
TYP.
UNIT
-0.8 -1.0 -0.1 -0.1
hFE-1 Classifications 80-160 120-240
Silicon Power Transistors
PACKAGE OUTLINE
2SA1217
Fig.2 Outline dimensions
Silicon Power Transistors
2SA1217
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