Silicon Power Transistors 2SA1215 DESCRIPTION MT-200 package
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Silicon Power Transistors
2SA1215
DESCRIPTION MT-200 package type 2SC2921 APPLICATIONS general purpose
PINNING(see Fig.2) Base Collector;connected mounting base Emitter Fig.1 simplified outline (MT-200) symbol DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base
CONDITIONS
VALUE -160 -160 -55~150
UNIT
Open collector
Tstg
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL VCEO VCEsat ICBO IEBO PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain Output capacitance Transition frequency CONDITIONS IC=-25mA IB=0
2SA1215
-160
TYP.
UNIT
IC=-5A ;IB=-0.5A
-2.0 -100 -100
VCB=-160V; IE=0 VEB=-5V; IC=0 IC=-5A VCE=-4V IE=0 VCB=-10V;f=1MHz IC=-2A VCE=-12V
Switching times Turn-on time Storage time Fall time IC=-5A;RL=12 IB1=-IB2=-0.5A VCC=-60V 0.25 0.85 0.20
classifications 50-100 70-140 90-180
Silicon Power Transistors
PACKAGE OUTLINE
2SA1215
Fig.2 outline dimensions
Silicon Power Transistors
2SA1215
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