Silicon Power Transistors 2SA1205 DESCRIPTION TO-3PN package
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Silicon Power Transistors
2SA1205
DESCRIPTION TO-3PN package power dissipation APPLICATIONS general purpose applications
PINNING Base Collector;connected mounting base Emitter Fig.1 simplified outline (TO-3PN) symbol DESCRIPTION
Absolute maximum ratings(Ta=)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector
CONDITIONS
VALUE -55~150
UNIT
Tstg
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain Transition frequency CONDITIONS IC=-25mA ;IB=0 IC=-5A; IB=-0.12A VCB=-70V; IE=0 VEB=-6V; IC=0 IC=-5A VCE=-0.5V IE=3A VCE=-12V
2SA1205
TYP.
UNIT
-0.5 -0.1 -0.1
Switching times tstg Turn-on time Storage time Fall time IC=-5A;RL=4 IB1=-IB2=-0.12A VCC=-20V 0.60 0.50 0.25
Silicon Power Transistors
PACKAGE OUTLINE
2SA1205
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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