Silicon Power Transistors 2SA1195 DESCRIPTION TO-202 package
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Silicon Power Transistors
2SA1195
DESCRIPTION TO-202 package power dissipation type 2SC2483 APPLICATIONS high voltage general purpose amplification
PINNING(see Fig.2) Base Collector Emitter Fig.1 simplified outline (TO-202) symbol DESCRIPTION
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25
CONDITIONS Open emitter Open base Open collector
VALUE -160 -160 -1.5 -0.5
UNIT
Collector power dissipation TC=25 -55~150
Tstg
Junction temperature Storage temperature
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SA1195
TYP.
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-500mA ;IB=-50m
-1.0
Base-emitter voltage
IC=-5mA VCE=-5V
-0.7
hFE-1
current gain
IC=-200mA VCE=-5V
hFE-2
current gain
IC=-500mA VCE=-5V
ICBO
Collector cut-off current
VCB=-150V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
Output capacitance
IE=0; VCB=-10V;f=1MHz
Transition frequency
IE=-100mA VCB=-5V
classifications 60-120 100-200
Silicon Power Transistors
PACKAGE OUTLINE
2SA1195
Fig.2 outline dimensions
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