Silicon Power Transistors 2SA1187 DESCRIPTION MT-200 package
|
|
|
Top Searches for this datasheet
Silicon Power Transistors
2SA1187
DESCRIPTION MT-200 package current capability APPLICATIONS general purpose applications
PINNING Base Collector;connected mounting base Emitter Fig.1 simplified outline (MT-200) symbol DESCRIPTION
Absolute maximum ratings(Ta=)
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -150 -150 -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain Output capacitance Transition frequency CONDITIONS IC=-25mA ;IB=0 IC=-5A; IB=-0.5A VCB=-150V; IE=0 VEB=-5V; IC=0 IC=-3A VCE=-4V IE=0 VCB=-80V;f=1MHz IE=1A VCE=-12V -150 TYP.
2SA1187
UNIT
-2.0 -0.1 -0.1
Classifications 50-100 70-140 90-180
Silicon Power Transistors
PACKAGE OUTLINE
2SA1187
Fig.2 outline dimensions
Other recent searches
STPS20L15G - STPS20L15G STPS20L15G Datasheet
PDU-G106B-SM - PDU-G106B-SM PDU-G106B-SM Datasheet
M16C - M16C M16C Datasheet
LM2CY11W - LM2CY11W LM2CY11W Datasheet
FDMS3662 - FDMS3662 FDMS3662 Datasheet
EM1B - EM1B EM1B Datasheet
EM1C - EM1C EM1C Datasheet
BSFJ78G07 - BSFJ78G07 BSFJ78G07 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
