Silicon Power Transistors 2SA1185 DESCRIPTION TO-3PN package
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Silicon Power Transistors
2SA1185
DESCRIPTION TO-3PN package current capability collector saturation voltage APPLICATIONS power amplifier applications
PINNING Base Collector;connected mounting base Emitter Fig.1 simplified outline (TO-3PN) symbol DESCRIPTION
Absolute maximum ratings(Ta=)
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current current gain current gain Output capacitance Transition frequency CONDITIONS IC=-0.1A ;IB=0 IC=-7A; IB=-0.7A IC=-7A VCE=-5V VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-1A VCE=-5V IC=-7A VCE=-5V IE=0 VCB=-10V;f=1MHz IC=-0.5A VCE=-5V TYP.
2SA1185
UNIT
-0.8 -1.5
hFE-1 Classifications 60-120 100-200 160-320
Silicon Power Transistors
PACKAGE OUTLINE
2SA1185
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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