Silicon Power Transistors 2SA1184 DESCRIPTION TO-126 package
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Silicon Power Transistors
2SA1184
DESCRIPTION TO-126 package breakdown voltage APPLICATIONS frequency power amplifier frequency power amplifier
PINNING DESCRIPTION Emitter Collector;connected mounting base Base
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 Open emitter Open base Open collector
CONDITIONS
VALUE -120 -120 -0.1
UNIT
Total power dissipation TC=25 -55+150
Tstg
Junction temperature Storage temperature
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SA1184
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA; IB=0
-120
V(BR)EBO
Emitter-base breakdown voltage
IE=-10A; IC=0
VCEsat
Collector-emitter saturation voltage
IC=-500mA; IB=-50mA
-1.0
Base-emitter voltage
IC=-500mA VCE=-5V
-1.0
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
current gain
IC=-100mA VCE=-5V
Transition frequency
IC=-0.1A VCE=5V
Silicon Power Transistors
PACKAGE OUTLINE
2SA1184
Fig.2 Outline dimensions
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