Silicon Power Transistors 2SA1166 DESCRIPTION MT-200 package
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Silicon Power Transistors
2SA1166
DESCRIPTION MT-200 package power dissipation APPLICATIONS general purpose applications
PINNING (see Fig.2) Base Collector;connected mounting base Emitter Fig.1 simplified outline (MT-200) symbol DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25
CONDITIONS Open emitter Open base Open collector
VALUE -150 -150 -55~150
UNIT
Tstg
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SA1166
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA IB=0
-150
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA IE=0
-150
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA IC=0
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
-2.0
VBEsat
Base-emitter saturation voltage
IC=-5A ;IB=-0.5A
-2.5
ICBO
Collector cut-off current
VCB=-150V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
current gain
IC=-5A VCE=-4V
Transition frequency
IC=-1A VCE=-10V
Silicon Power Transistors
PACKAGE OUTLINE
2SA1166
Fig.2 outline dimensions
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