Silicon Power Transistors 2SA1146 DESCRIPTION TO-3P(I) packa
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Silicon Power Transistors
2SA1146
DESCRIPTION TO-3P(I) package power dissipations APPLICATIONS audio general purpose amplifier applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-3P(I)) symbol
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base
CONDITIONS
VALUE -140 -140 -55~150
UNIT
Open collector
Tstg
Silicon Power Transistors
2SA1146
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ,IB=0
-140
V(BR)EBO VCEsat
Emitter-base breakdown voltage
IE=-1mA ,IC=0 IC=-5A; IB=-0.5A
Collector-emitter saturation voltage
-2.0
ICBO
Collector cut-off current
VCB=-140V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
current gain
IC=-1A VCE=-5V
hFE-2
current gain
IC=-4A VCE=-5V
Transition frequency
IC=-0.5A VCE=-10V
Silicon Power Transistors
PACKAGE OUTLINE
2SA1146
Fig.2 Outline dimensions(unindicated tolerance:±0.10
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