Silicon Power Transistors 2SA1142 DESCRIPTION TO-126 package
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Silicon Power Transistors
2SA1142
DESCRIPTION TO-126 package type 2SC2682 APPLICATIONS frequency power amplifier; high frequency power amplifier applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-126) symbol
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25 Collector power dissipation TC=25 Tstg Junction temperature Storage temperature -55~150 CONDITIONS Open emitter Open base Open collector VALUE -180 -180 -0.1 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SA1142
TYP.
UNIT
VCEsat
Collector-emitter saturation voltage
IC=-50mA; IB=-5mA
-0.16
-0.5
VBEsat
Base-emitter saturation voltage
IC=-50mA; IB=-5mA
-0.8
-1.5
ICBO
Collector cut-off current
VCB=-180V; IE=0
IEBO
Emitter cut-off current
VEB=-3V; IC=0
hFE-1
current gain
IC=-1mA VCE=-5V
hFE-2
current gain
IC=-10mA VCE=-5V
Transition frequency
IC=-20mA VCE=-10V
Output capacitance
IE=0 VCB=-10V;f=1MHz
hFE-2 Classifications 100-200 160-320
Silicon Power Transistors
PACKAGE OUTLINE
2SA1142
Fig.2 Outline dimensions
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