Silicon Power Transistors 2SA1133 2SA1133A DESCRIPTION TO-22
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Silicon Power Transistors
2SA1133 2SA1133A
DESCRIPTION TO-220 package breakdown voltage power dissipation type 2SC2660/2660A APPLICATIONS power amplifier vertical deflection output applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-220) symbol
Absolute maximum ratings(Ta=25)
SYMBOL VCBO PARAMETER Collector-base voltage 2SA1133 VCEO Collector-emitter voltage 2SA1133A VEBO Tstg Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -180 -2.0 -3.0 -55~150 CONDITIONS Open emitter VALUE -200 -150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SA1133 2SA1133A
TYP.
UNIT
2SA1133 V(BR)CEO Collector-emitter breakdown voltage 2SA1133A IC=-5mA ,IB=0
-150 -180
V(BR)CBO
Collector-base breakdown voltage
IC=-0.5mA ,IE=0
-200
V(BR)EBO
Emitter-base breakdown voltage
IE=-0.5mA ,IC=0
VCEsat
Collector-emitter saturation voltage
IC=-500mA; IB=-50mA
-1.0
Base-emitter voltage
IC=-400mA VCE=-10V
-1.0
ICBO
Collector cut-off current
VCB=-200V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE-1
current gain
IC=-150m VCE=-10V
hFE-2
current gain
IC=-400mA VCE=-10V
hFE-1 Classifications 60-140 100-240
Silicon Power Transistors
PACKAGE OUTLINE
2SA1133 2SA1133A
Fig.2 Outline dimensions(unindicated tolerance:±0.10
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