Silicon Power Transistors 2SA1129 DESCRIPTION TO-220 package

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Silicon Power Transistors 2SA1129 DESCRIPTION TO-220 package

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Silicon Power Transistors
2SA1129
DESCRIPTION TO-220 package collector saturation voltage current capacity type 2SC2654 APPLICATIONS low-frequency power amplifiers mid-speed switching applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-220) symbol
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25
CONDITIONS Open emitter Open base Open collector
VALUE -3.5
UNIT
Collector power dissipation Ta=25 -55~150
Tstg
Junction temperature Storage temperature
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat-1 VCEsat VBEsat-1 VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain current gain CONDITIONS IC=-10mA ,IB=0 IC=-3A; IB=-0.1A IC=-5A; IB=-0.5A IC=-3A; IB=-0.1A IC=-5A; IB=-0.5A VCB=-30V; IE=0 VEB=-5V; IC=0 IC=-3A VCE=-1V IC=-5A VCE=-1V TYP.
2SA1129
UNIT
-0.3 -0.6 -1.5 -2.0
Switching times resistive load tstg Turn-on time Storage time Fall time IC=-5.0A IB1=- IB2=-0.5A RL=4;VCC=-20V
hFE-1 Classifications 40-80 60-120 100-200
Silicon Power Transistors
PACKAGE OUTLINE
2SA1129
Fig.2 Outline dimensions(unindicated tolerance:±0.10

Silicon Power Transistors 2SA1129 DESCRIPTION TO-220 package

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