Silicon Power Transistors 2SA1125 DESCRIPTION TO-220 package
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Silicon Power Transistors
2SA1125
DESCRIPTION TO-220 package type 2SC2633 breakdown voltage APPLICATIONS audio frequency high voltage amplifier applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-220) symbol
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -100 -55~150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain Output capacitance Transition frequency CONDITIONS IC=-0.1mA ,IB=0
2SA1125
-150
TYP.
UNIT
IE=-10A ,IC=0 IC=-30mA; IB=-3mA VCB=-100V; IE=0 VEB=-4V; IC=0 IC=-10mA VCE=-5V IE=0 VCB=-10V;f=1MHz IC=-10mA VCE=-10V
-1.0
Classifications 90-155 130-220 185-330 260-450
Silicon Power Transistors
PACKAGE OUTLINE
2SA1125
Fig.2 Outline dimensions(unindicated tolerance:±0.10
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