Silicon Power Transistors 2SA1120 DESCRIPTION TO-126 package
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Silicon Power Transistors
2SA1120
DESCRIPTION TO-126 package transition frequency collector saturation voltage APPLICATIONS power amplifier applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 Total power dissipation TC=25 Tstg Junction temperature Storage temperature -55+150 CONDITIONS Open emitter Open base Open collector VALUE UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP.
2SA1120
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=-4A; IB=-0.1A
-1.0
Base-emitter voltage
IC=-4A VCE=-2V
-1.5
ICBO
Collector cut-off current
VCB=-35V; IE=0
-0.1
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-0.1
hFE-1
current gain
IC=-500mA VCE=-2V
hFE-2
current gain
IC=-4A VCE=-2V
Output capacitance
IE=0 VCB=-10V f=1MHz
Transition frequency
IC=-500mA VCE=-2V
Silicon Power Transistors
PACKAGE OUTLINE
2SA1120
Fig.2 Outline dimensions
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