Silicon Power Transistors 2SA1117 DESCRIPTION TO-3 package p
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Silicon Power Transistors
2SA1117
DESCRIPTION TO-3 package power dissipations APPLICATIONS power switching amplifier general purpose applications
PINNING(see Fig.2) Base Emitter Collector Fig.1 simplified outline (TO-3) symbol DESCRIPTION
Absolute maximum ratings(Ta=)
SYMBOL VCBO VCEO VEBO
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25
CONDITIONS Open emitter Open base Open collector
VALUE -200 -200 -65~150
UNIT
Tstg
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SA1117
TYP.
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
-200
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=-5A; IB=-0.5A
-2.0
ICBO
Collector cut-off current
VCB=-200V; IE=0
-0.1
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-0.1
current gain
IC=-8A VCE=-4V
Transition frequency
IC=-0.5A VCE=-12V
Silicon Power Transistors
PACKAGE OUTLINE
2SA1117
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
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