Silicon Power Transistors 2SA1111 2SA1112 DESCRIPTION TO-220
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Silicon Power Transistors
2SA1111 2SA1112
DESCRIPTION TO-220 package type 2SC2591/2592 linearity VCEO APPLICATIONS audio frequency, high power amplifiers application
PINNING DESCRIPTION Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-220) symbol
Absolute maximum ratings(Ta=25)
SYMBOL PARAMETER 2SA1111 VCBO Collector-base voltage 2SA1112 2SA1111 VCEO Collector-emitter voltage 2SA1112 VEBO Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -180 -1.5 -55~150 Open emitter -180 -150 CONDITIONS VALUE -150 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS
2SA1111 2SA1112
TYP.
UNIT
2SA1111 V(BR)CEO Collector-emitter breakdown voltage 2SA1112 IC=-0.1mA ,IB=0
-150 -180
V(BR)EBO
Emitter-base breakdown voltage
IE=-10A ,IC=0
VCEsat
Collector-emitter saturation voltage
IC=-0.5A; IB=-50mA
-0.5
-2.0
VBEsat
Base-emitter saturation voltage
IC=-0.5A; IB=-50mA
-1.0
-2.0
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE-1 hFE-2
current gain
IC=-150mA VCE=-10V IC=-500mA VCE=-5V
current gain
Output capacitance
IE=0 VCB=-10V;f=1MHz
Transition frequency
IC=50mA VCE=-10V
hFE-1 Classifications 65-110 90-155 130-220 185-330
Silicon Power Transistors
PACKAGE OUTLINE
2SA1111 2SA1112
Fig.2 Outline dimensions(unindicated tolerance:±0.10
Silicon Power Transistors
2SA1111 2SA1112
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