Silicon Power Transistors DESCRIPTION With TO-3 package High volt

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Silicon Power Transistors DESCRIPTION With TO-3 package High volt

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Silicon Power Transistors
DESCRIPTION With TO-3 package High voltage capability Fast switching speeds saturation voltage APPLICATIONS Designed high voltage switching applications such Off-line power supplies Converter circuits Pulse width modulated regulators
PINNING (See Fig.2) Base Emitter DESCRIPTION
2N6676 2N6677 2N6678
Absolute maximum ratings(Ta=)
SYMBOL PARAMETER
Collector
2N6676 2N6677
Fig.1 simplified outline (TO-3) symbol
VCBO
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature
2N6678 2N6676 2N6677 2N6678 Open base
CONDITIONS
VALUE
UNIT
Open emitter
VCEO
VEBO Tstg
Open collector
Tc=25
-65~200
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER 2N6676 VCEO(SUS) Collector-emitter sustaining voltage 2N6677 2N6678 VCEsat VBEsat ICEV IEBO hFE-1 Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current current gain IC=15A; IB=3A IC=15A; IB=3A IC=0.2A IB=0
2N6676 2N6677 2N6678
CONDITIONS
TYP.
UNIT
VCE=RatedVCEV;VBE(off)=-1.5V TC=100 VEB=8V; IC=0 IC=1A VCE=5V IC=15A VCE=3V IE=0 ;VCB=10V;f=0.1MHz
current gain
Output capacitance
Transition frequency
Switching times
Delay time Rise time
IC=1A VCE=10V;f=5.0MHz
Storage time Fall time
IC=15A; IB1=-IB2=3.0A VCC=200V; tp=20s; Duty Cycle2.0% VBB=6V,RL=1.35
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance from junction case UNIT
Silicon Power Transistors
PACKAGE OUTLINE
2N6676 2N6677 2N6678
Fig.2 Outline dimensions

Silicon Power Transistors DESCRIPTION With TO-3 package High volt

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