Silicon Power Transistors DESCRIPTION Power Dissipation Switching
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Silicon Power Transistors
DESCRIPTION Power Dissipation Switching Speed Breakdown Voltage: V(BR)CEO= 300V(Min)- 2N6674 400V(Min)- 2N6675 APPLICATIONS Designed high voltage switching applications such regulators relay drivers circuits ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER 2N6674 VCBO Collector-Base Voltage VALUE Collector Power Dissipation@TC=25 Tstg Junction Temperature Storage Temperature -65~200
2N6674/6675
UNIT
2N6675
VCEO
Collector-Emitter Voltage
VCEX
Collector-Emitter Voltage
2N6674 2N6675 2N6674 2N6675
VEBO
Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@Ta=25
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal Resistance,Junction Case UNIT
Websitewww.iscsemi.cn
Silicon Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER 2N6674 V(BR)CEO Collector-Emitter Breakdown Voltage 2N6675 VCE(sat)-1 VCE(sat)-2 VBE(sat) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 2N6674 ICEX Collector Cutoff Current 2N6675 2N6674 ICBO Collector Cutoff Current 10A; 15A; 10A; VCE= 450V; VBE= -1.5V VCE= 650V; VBE= -1.5V 200mA CONDITIONS
2N6674/6675
UNIT
IEBO hFE-1 hFE-2
Emitter Cutoff Current Current Gain Current Gain
2N6675
VEB=
VCB= 450V; VCB= 650V;
VCE= VCE= VCB= 10V; ftest= 1MHz
Output Capacitance
Websitewww.iscsemi.cn
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