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isc Product Specification

isc Silicon NPN Power Transistors

INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2N6674 / 6675
2N6675
Collector-Emitter Voltage
2N6674 2N6675 2N6674 2N6675
VEBO IC IB
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.0 UNIT / W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
2N6674 / 6675
MIN 300
IEBO hFE-1 hFE-2 COB
Emitter Cutoff Current DC Current Gain DC Current Gain
2N6675
scs .i
0.1 mA 0.1 1.0 mA 1.0 2.0 40 20 500 pF mA
Output Capacitance
isc Websitewww.iscsemi.cn