Silicon Power Transistors DESCRIPTION With TO-3 package Complemen
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Silicon Power Transistors
DESCRIPTION With TO-3 package Complement type 2N6282/6283/6284 High current gain DARLINGTON APPLICATIONS general-purpose amplifier low-frequency switching applications
PINNING Base Emitter DESCRIPTION
2N6285 2N6286 2N6287
Fig.1 simplified outline (TO-3) symbol Collector
Absolute maximum ratings(Ta=)
SYMBOL
PARAMETER
CONDITIONS
2N6285 2N6286
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
2N6287 2N6285 2N6286 2N6287
Open emitter
EMIC
VALUE
UNIT
-100
Open base
-100 Open collector -0.5 TC=25 -65~200
VEBO Tstg
Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.09 UNIT
Silicon Power Transistors
2N6285 2N6286 2N6287
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER 2N6285 VCEO(SUS) Collector-emitter sustaining voltage 2N6286 2N6287 VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage IC=-10A; IB=-40mA IC=-20A ;IB=-200mA IC=-20A ;IB=-200mA IC=-10A VCE=-3V 2N6285 2N6286 VCE=-30V; IB=0 VCE=-40V; IB=0 VCE=-50V; IB=0 IC=-0.2A ;IB=0 CONDITIONS -100 -2.0 -3.0 -4.0 -2.8 TYP. UNIT
ICEO
Collector cut-off current
2N6287
ICEX
Collector cut-off current
2N6285 2N6286
VEB=-5V; IC=0
VCE=-60V; VBE=-1.5V TC=150 VCE=-80V; VBE=-1.5V TC=150
-1.0 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -2.0
2N6287 IEBO hFE-1 hFE-2 Emitter cut-off current current gain current gain Output capacitance
VCE=-100V; VBE=-1.5V TC=150
IC=-10A VCE=-3V IC=-20A VCE=-3V IE=0; VCB=-10V;f=1MHz
18000
Silicon Power Transistors
PACKAGE OUTLINE
2N6285 2N6286 2N6287
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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