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Silicon NPN Power Transistors

DESCRIPTION With TO-3 package Complement to type 2N6285 / 6286 / 6287 High DC current gain DARLINGTON APPLICATIONS For use in general-purpose amplifier and low-frequency switching applications

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-3 package Complement to type 2N6285 / 6286 / 6287 High DC current gain DARLINGTON APPLICATIONS For use in general-purpose amplifier and low-frequency switching applications
PINNING PIN 1 2 3 Base Emitter DESCRIPTION
2N6282 2N6283 2N6284
Fig.1 simplified outline (TO-3) and symbol Collector
SYMBOL
PARAMETER
CONDITIONS
2N6282 2N6283
Collector-base voltage
Collector-emitter voltage
2N6284 2N6282 2N6283 2N6284
Open emitter
OND MIC E
TOR UC
VALUE 60 80 100 60 80 100
Open base
VEBO IC ICM IB PD Tj Tstg
Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature
Open collector
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.09 UNIT / W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6282 2N6283 2N6284
CHARACTERISTICS
Collector cut-off current
2N6284 2N6282 2N6283
Collector cut-off current
2N6284
OND MIC E
TOR UC
IEBO hFE-1 hFE-2 COB
Emitter cut-off current DC current gain DC current gain Output capacitance
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6282 2N6283 2N6284
CON EMI
TOR DUC