Silicon Power Transistors DESCRIPTION With TO-3 package Complemen
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Silicon Power Transistors
DESCRIPTION With TO-3 package Complement type 2N6285/6286/6287 High current gain DARLINGTON APPLICATIONS general-purpose amplifier low-frequency switching applications
PINNING Base Emitter DESCRIPTION
2N6282 2N6283 2N6284
Fig.1 simplified outline (TO-3) symbol Collector
Absolute maximum ratings(Ta=)
SYMBOL
PARAMETER
CONDITIONS
2N6282 2N6283
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
2N6284 2N6282 2N6283 2N6284
Open emitter
VALUE
UNIT
Open base
VEBO Tstg
Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature
Open collector
TC=25
-65~200
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance junction case VALUE 1.09 UNIT
Silicon Power Transistors
2N6282 2N6283 2N6284
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER 2N6282 VCEO(SUS) Collector-emitter sustaining voltage 2N6283 2N6284 VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage IC=10A; IB=40mA IC=20A ;IB=200mA IC=20A ;IB=200mA IC=10A VCE=3V 2N6282 2N6283 VCE=30V; IB=0 VCE=40V; IB=0 VCE=50V; IB=0 IC=0.2A ;IB=0 CONDITIONS TYP. UNIT
ICEO
Collector cut-off current
2N6284 2N6282 2N6283
ICEX
Collector cut-off current
2N6284
VCE=60V; VBE=-1.5V TC=150 VCE=80V; VBE=-1.5V TC=150
VCE=100V; VBE=-1.5V TC=150 VEB=5V; IC=0 IC=10A VCE=3V IC=20A VCE=3V IE=0; VCB=10V;f=1MHz
IEBO hFE-1 hFE-2
Emitter cut-off current current gain current gain Output capacitance
18000
Silicon Power Transistors
PACKAGE OUTLINE
2N6282 2N6283 2N6284
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
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