Silicon Power Transistors 2N6106 2N6108 2N6110 DESCRIPTION W
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Silicon Power Transistors
2N6106 2N6108 2N6110
DESCRIPTION With TO-220 package With short APPLICATIONS Power amplifier switching circuits applications
PINNING DESCRIPTION Emitter Collector;connected mounting base Base Fig.1 simplified outline (TO-220) symbol
Absolute maximum ratings(Ta=25)
SYMBOL PARAMETER CONDITIONS
VCBO
Collector-base voltage
2N6106 2N6108 Open emitter
VCEO
Collector-emitter voltage
VEBO Tstg
Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature
2N6106 2N6108 2N6110
2N6110
Open base
VALUE
UNIT
Open collector
TC=25
-65~150
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal resistance from junction case 3.125 UNIT
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER 2N6106 VCEO(SUS) Collector-emitter sustaining voltage 2N6108 2N6110 VCEsat Collector-emitter saturation voltage Base-emitter voltage 2N6106 ICEO Collector cut-off current 2N6108 2N6110 2N6106 2N6108 IC=-7A;IB=-3A IC=-7A VCE=-4V VCE=-20V; IB=0 VCE=-40V; IB=0 VCE=-60V; IB=0 IC=-0.1A ;IB=0
2N6106 2N6108 2N6110
CONDITIONS
TYP.
UNIT
-3.5 -3.0
-1.0
ICEX
Collector cut-off current
VCE=-40V; VBE=1.5V VCE=-30V; BE=1.5V,TC=125 VCE=-60V; VBE=1.5V VCE=-50V; BE=1.5V,TC=125 VCE=-80V; VBE=1.5V VCE=-70V; BE=1.5V,TC=125 VEB=-5V; IC=0
IEBO
Emitter cut-off current
2N6106 2N6108 2N6110
2N6110
-0.1 -2.0 -0.1 -2.0 -1.0
-0.1 -2.0
IC=-2A VCE=-4V IC=-2.5A VCE=-4V
hFE-1
current gain
IC=-3A VCE=-4V IC=-7A VCE=-4V IE=0 VCB=-10V;f=1MHz IC=-0.5A VCE=-4V;f=1MHz
hFE-2
current gain Output capacitance Transition frequency
Silicon Power Transistors
PACKAGE OUTLINE
2N6106 2N6108 2N6110
Fig.2 Outline dimensions(unindicated tolerance:±0.10
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