DESCRIPTION Safe Operating Area Current Gain-hFE=20-70@IC Saturation V
|
|
|
Top Searches for this datasheet
DESCRIPTION Safe Operating Area Current Gain-hFE=20-70@IC Saturation Voltage: VCE(sat)= V(Max)@ Type MJ2955 APPLICATIONS general-purpose switching amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCER VCEO VEBO
2N3055
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature
VALUE -65~200
UNIT
Tstg
THERMAL CHARACTERISTICS
SYMBOL PARAMETER Thermal Resistance,Junction Case 1.52 UNIT
Websitewww.iscsemi.cn
Silicon Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCER(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICEX IEBO hFE-1 hFE-2 Is/b PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Current Gain Current Gain Second Breakdown Collector Current with Base Forward Biased Current Gain-Bandwidth Product CONDITIONS IC=200mA IB=0 IC=200mA RBE=100 0.4A
2N3055
UNIT
2.87
10A; 3.3A VCE= VCE= 30V; IB=0
VCE= 100V; VBE(off)= 1.5V VCE= 100V; VBE(off)= 1.5V,TC=150 VEB= 7.0V; IC=0 VCE= VCE= VCE= 40V,t= 1.0s,Nonrepetitive 0.5A VCE= 10V;f=1.0MHz
Websitewww.iscsemi.cn
Silicon Power Transistors
2N3055
Websitewww.iscsemi.cn
Other recent searches
uPD45128163-T - uPD45128163-T uPD45128163-T Datasheet
R100AXB - R100AXB R100AXB Datasheet
PMBT3906 - PMBT3906 PMBT3906 Datasheet
MLX90711 - MLX90711 MLX90711 Datasheet
LO566NHR4-70H - LO566NHR4-70H LO566NHR4-70H Datasheet
LM259X - LM259X LM259X Datasheet
GC310 - GC310 GC310 Datasheet
74VCX163245 - 74VCX163245 74VCX163245 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
