TECHNICAL SPECIFICATIONS SILICON RECTIFIER VOLTAGE50-1000V CURREN
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TECHNICAL SPECIFICATIONS SILICON RECTIFIER
VOLTAGE50-1000V CURRENT1.0A
FEATURES
reliability leakage forward voltage drop current capability
.025(0.65) DIA. .021(0.55)
.787(20.0) MIN. .138(3.5) .114(2.9)
MECHANICAL DATA
Molded plastic UL94V-0 rate flame retardant MIL-STD- 202E, Method guaranteed band denotes cathode position: 0.19 grams
.787(20.0) MIN.
.102(2.6) DIA. .087(2.2)
Dimensions inches (millimeters)
MAXIMUM RATINGS ELECTRONICAL CHARACTERISTICS
Ratings ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive inductive load. capacitive load, derate current 20%.
SYMBOL
units 1000 1000
Maximum Recurrent Peak Reverse Voltage Maximum Voltage Maximum Blocking Voltage Maximum Average Forward rectified Current TA=25°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed rate load (JEDEC method) Maximum Instantaneous forward Voltage 1.0A TA=25°C Maximum Reverse Current Rated Blocking Voltage TA=100°C Maximum Full Load Reverse Current Average Full Cycle .375"(9.5mm) lead length TL=75°C Typical Junction Capacitance (Note) Typical Thermal Resistance Notes:
VRRM VRMS
IFSM
°C/W
Measured 1MHz applied reverse voltage volts
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