AOTF470 uses advanced trench technology design provide excellent RDS(O
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AOTF470 N-Channel Enhancement Mode Field Effect Transistor
AOTF470 uses advanced trench technology design provide excellent RDS(ON) with gate charge. This device suitable PWM, load switching general purpose applications. -RoHs Compliant
(VGS= 10V) RDS(ON) 11.5m (VGS 10V)
AOTF470 TO-220F
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
AOTF470
Units
TC=25°C TC=100°C TSTG
Repetitive avalanche energy L=0.3mH Power Dissipation
TC=25°C TC=100°C Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case
Symbol
AOTF470
Units °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOTF470
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance Conditions ID=250uA, VGS=0V VDS=60V, VGS=0V TJ=55°C VDS=0V, VGS=±25V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125°C 16.0 4700 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=30A VGS=10V, VDS=30V, RL=1, RGEN=3 IF=30A, dI/dt=100A/µs 5640 11.5 19.0 Units
VDS=5V, ID=50A Transconductance Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
value measured with device still environment with =25°C. power dissipation based J(MAX)=175°C, using junction-to-case thermal resistance, more useful setting upper dissipation limit cases where additional heatsinking used. Repetitive rating, pulse width limited junction temperature J(MAX)=175°C. thermal impedence from junction case case ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These curves based junction-to-case thermal impedence which measured with device mounted large heatsink, assuming maximum junction temperature J(MAX)=175°C. maximum current rating limited bond-wires. Rev0: Feb. 2009
Derate above
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOTF470
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A) 125°C 25°C VGS=4.5V (Volts) Figure On-Region Characteristics RDS(ON) VGS=10V Figure On-Resistance Drain Current Gate Voltage ID=30A RDS(ON) 25°C 1.0E-04 (Volts) AOT430 Figure On-Resistance Gate-Source Voltage (Volts) Figure Body-Diode Characteristics 1.0E-03 -40°C Normalized On-Resistance VGS=10V, -40°C VDS=5V
5.5V
VGS(Volts) Figure Transfer Characteristics
Temperature (°C) Figure On-Resistance Junction Temperature 1.0E+02 1.0E+01 125°C 1.0E+00 1.0E-01 1.0E-02
Derate above 25oC
125°C
25°C
Alpha Omega Semiconductor, Ltd.
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AOTF470
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=30V ID=30A Capacitance (nF) Coss Crss Ciss
(Volts)
(nC) Figure Gate-Charge Characteristics
0.01 (Volts) Figure Capacitance Characteristics
ID(A), Peak Avalanche Current
0.000001
TA=150°C TA=25°C
0.00001
0.0001
0.001
Time avalanche, Figure Single Pulse Avalanche capability
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOTF470
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
TCASE (°C) Figure Current De-rating (Note Power Dissipation Current rating ID(A) TCASE (°C) Figure Power De-rating (Note
1000
(Amps)
TJ(Max)=175°C, TA=25°C 10µs 100µs
RDS(ON) limited
10ms 100ms
1000
(Volts) Figure Maximum Forward Biased Safe Operating Area (Note
Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=2.8°C/W descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.001 0.00001 0.0001 0.001 0.01
0.01
Single Pulse
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
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