formerly engineering part number AOT9604 AOT5N60 been fabricated

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formerly engineering part number AOT9604 AOT5N60 been fabricated

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AOT5N60 600V, N-Channel MOSFET
formerly engineering part number AOT9604
AOT5N60 been fabricated using advanced high voltage MOSFET process that designed deliver high levels performance robustness popular AC-DC applications. providing RDS(on), Ciss Crss along with guaranteed avalanche capability these parts adopted quickly into existing offline power supply designs.
Features
700V 150°C RDS(ON) (VGS 10V) 100% Tested! 100% Tested! Tested!
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TO-220
Absolute Maximum Ratings TA=25°C unless otherwise noted Maximum Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
Units V/ns
TC=25°C TC=100°C dV/dt TSTG Symbol Typical 0.76
1.05 Maximum 0.95
Repetitive avalanche energy
Single pulsed avalanche energy Peak diode recovery dv/dt TC=25°C Power Dissipation Derate above Junction Storage Temperature Range Maximum lead temperature soldering purpose, 1/8" from case seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Case-to-Sink Maximum Junction-to-Case
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOT5N60
Electrical Characteristics J=25°C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS BVDSS IDSS IGSS VGS(th) RDS(ON) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V VDS=600V, VGS=0V VDS=480V, TJ=125°C VDS=0V, VGS=±30V VDS=VGS, ID=250µA VGS=10V, ID=2.5A VDS=40V, ID=2.5A 1.44 0.76 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 58.4 16.8 VGS=10V, VDS=480V, ID=5A VGS=10V, VDS=300V, ID=5A, RG=25 IF=5A,dI/dt=100A/µs,VDS=100V 0.65 ±100
Parameter
Conditions
Units
Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Total Gate Charge Gate Source Charge tD(on) tD(off) Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V
value measured with device still environment with =25°C. power dissipation based TJ(MAX)=150°C, using junction-to-case thermal resistance, more useful setting upper dissipation limit cases where additional heatsinking used. Repetitive rating, pulse width limited junction temperature TJ(MAX)=150°C. thermal impedence from junction case case ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These curves based junction-to-case thermal impedence which measured with device mounted large heatsink, assuming maximum junction temperature TJ(MAX)=150°C. L=60mH, IAS=2.6A, VDD=50V, RG=25, Starting TJ=25°C July 2008
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOT5N60
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) On-Region Characteristics Normalized On-Resistance -100 VGS=10V ID=2A VGS=5.5V ID(A) 6.5V 125°C VDS=40V -55°C
25°C
VGS(Volts) Figure Transfer Characteristics
RDS(ON)
VGS=10V
Figure On-Resistance Drain Current Gate Voltage
Temperature (°C) Figure On-Resistance Junction Temperature 1.0E+01 125°C 1.0E+00 1.0E-01 1.0E-02 25°C
BVDSS (Normalized)
1.0E-03 1.0E-04 (Volts) Figure Body-Diode Characteristics
-100
(oC) Figure Break Down Junction Temperature
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOT5N60
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=480V ID=5A Capacitance (pF) 1000 Ciss 10000
(Volts)
Coss
Crss
(nC) Figure Gate-Charge Characteristics
(Volts) Figure Capacitance Characteristics
RDS(ON) limited
10µs
Current rating ID(A)
(Amps)
100µs TJ(Max)=150°C TC=25°C
(Volts)
10ms 0.1s
0.01 1000
Figure Maximum Forward Biased Safe Operating Area AOT5N60 (Note Normalized Transient Thermal Resistance
TCASE (°C) Figure Current De-rating (Note
D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=0.95°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance AOT5N60 (Note
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOT5N60
Gate Charge Test Circuit Waveform
Charge
istive Switching Test Circuit Waveforms
d(off)
Unclamped Inductive Switching (UIS) Test Circuit Waveforms
BVDSS
Diode Recovery Test Circuit Waveforms
dI/dt
Alpha Omega Semiconductor, Ltd.
www.aosmd.com

formerly engineering part number AOT9604 AOT5N60 been fabricated

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