AOD4140 fabricated with SDMOStrench technology that combines excellent
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AOD4140 N-Channel SDMOS POWER Transistor
AOD4140 fabricated with SDMOStrench technology that combines excellent RDS(ON) with gate charge.The result outstanding efficiency with controlled switching behavior. This universal technology well suited PWM, load switching general purpose applications. -RoHS Compliant -Halogen Free*
RDS(ON) RDS(ON) <14m 10V) 10V) 4.5V)
100% Tested! 100% Tested!
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Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
Maximum
Units
TC=25°C TC=100°C PDSM TSTG
Pulsed Forward Diode Current
Repetitive avalanche energy L=50uH TC=25°C Power Dissipation Power Dissipation
TC=100°C TA=25°C TA=70°C
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case
Symbol Steady-State Steady-State
14.2
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOD4140
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=25V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=30A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=30A IS=1A, VGS=0V TJ=125°C VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=12.5V, ID=30A VGS=10V, VDS=12.5V, RL=0.42, RGEN=3 IF=30A, dI/dt=500A/µs 1180 21.7 13.8 21.5 10.6 1450 10.5 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with =25°C. Power dissipation based maximum allowed junction temperature 150°C. value given application depends user's specific board design, maximum temperature 175°C used allows power dissipation based J(MAX)=175°C, using junction-to-case thermal resistance, more useful setting upper dissipation limit cases where additional heatsinking used. Repetitive rating, pulse width limited junction temperature J(MAX)=175°C. thermal impedence from junction case case ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These curves based junction-to-case thermal impedence which measured with device mounted large heatsink, assuming maximum junction temperature J(MAX)=175°C. maximum current rating limited bond-wires. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. curve provides single pulse rating. *This device guaranteed green after data code 8X11 (Sep 2008). 2008 COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOD4140
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
4.5V VGS=3.5V ID(A) VDS=5V
125°C 25°C
(Volts) On-Region Characteristics Normalized On-Resistance RDS(ON) Figure On-Resistance Drain Current Gate Voltage VGS=10V VGS=4.5V
VGS(Volts) Figure Transfer Characteristics
VGS=10V ID=30A
VGS=4.5V
ID=20A
Temperature (°C) Figure On-Resistance Junction Temperature
1.0E+02
ID=30A RDS(ON) 25°C (Volts) Figure On-Resistance Gate-Source Voltage 125°C
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 (Volts) Figure Body-Diode Characteristics 125°C
25°C
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOD4140
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=12.5V ID=30A Capacitance (pF) 1800 1600 1400 1200 1000 (nC) Figure Gate-Charge Characteristics Crss (Volts) Figure Capacitance Characteristics Coss Ciss
(Volts)
1000.0 100.0 (Amps) 10.0 0.01 10µs
Power 0.0001
10µs 100µs
RDS(ON) limited
TJ(Max)=150°C TC=25°C
10ms
TJ(Max)=150°C TC=25°C
(Volts)
0.001
0.01
Figure Maximum Forward Biased Safe Operating Area (Note Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3°C/W
Pulse Width Figure Single Pulse Power Rating Junction-toCase (Note
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOD4140
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
ID(A), Peak Avalanche Current 0.000001 TA=150°C TA=125°C TA=100°C TA=25°C Power Dissipation 0.00001 0.0001 0.001 TCASE (°C) Figure Power De-rating (Note
Time avalanche, Figure Single Pulse Avalanche capability
10000
TA=25°C
Current rating ID(A) Power
1000
TCASE (°C) Figure Current De-rating (Note
0.01 1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01
Single Pulse 1000
0.001 0.00001
0.0001
0.001
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOD4140
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(nC) Figure Diode Reverse Recovery Charge Peak Current Conduction Current Is=20A 1000 1000 Is=20A (nC) (ns) di/dt (A/µs) Figure Diode Reverse Recovery Time Softness Factor di/dt di/dt=800A/us (ns) Figure Diode Reverse Recovery Time Softness Factor Conduction Current di/dt=800A/us
di/dt (A/µs) Figure Diode Reverse Recovery Charge Peak Current di/dt
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOD4140
Gate Charge Test Circuit Waveform
Charge
Resistive Switching Test Circuit Waveforms
d(on) d(off)
Unclamped Inductive Switching (UIS) Test Circuit Waveforms
EAR= LIAR
BVDSS
Diode Recovery Test Circuit Waveforms
dI/dt
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
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