AOB440 uses advanced trench technology design provide excellent DS(ON)

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AOB440 uses advanced trench technology design provide excellent DS(ON)

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AOB440 N-Channel Enhancement Mode Field Effect Transistor
AOB440 uses advanced trench technology design provide excellent DS(ON) with gate charge. This device suitable UPS, high current switching applications. Standard Product AOB440 Pb-free (meets ROHS Sony specifications).
10V) RDS(ON) 7.5m (VGS 10V)
TO-263 D2-PAK
View Drain Connected
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current Avalanche Current Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation
Maximum
Units
TC=25°C TC=100°C TSTG
TC=100°C
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case
t10s Steady-State Steady-State
Symbol
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOB440
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance Conditions ID=250uA, VGS=0V VDS=60V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125°C 10.5 3800 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=30A VGS=10V, VDS=30V, RL=1, RGEN=3 IF=30A, dI/dt=100A/µs 4560 Units
VDS=5V, ID=30A Transconductance Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
value measured with device still environment with =25°C. power dissipation based J(MAX)=175°C, using junction-to-case thermal resistance, more useful setting upper dissipation limit cases where additional heatsinking used. Repetitive rating, pulse width limited junction temperature J(MAX)=175°C. thermal impedence from junction case case ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These curves based junction-to-case thermal impedence which measured with device mounted large heatsink, assuming maximum junction temperature J(MAX)=175°C. maximum current rating limited bond-wires. Rev1: May. 2008
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOB440
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
4.5V (Volts) Figure On-Region Characteristics RDS(ON) Figure On-Resistance Drain Current Gate Voltage ID=30A RDS(ON) 125°C 25°C -40°C (Volts) Figure On-Resistance Gate-Source Voltage 0.0001 (Volts) Figure Body-Diode Characteristics 0.01 0.001 -40°C 25°C 125°C Normalized On-Resistance Temperature (°C) Figure On-Resistance Junction Temperature VGS=10V, VGS=4V VGS(Volts) Figure Transfer Characteristics -40°C ID(A) VDS=5V
125°C 25°C
VGS=10V
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOB440
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=30V ID=30A Capacitance (nF) (Volts) Ciss (nC) Figure Gate-Charge Characteristics (Volts) Figure Capacitance Characteristics 10000 RDS(ON) limited 10µs 100µs TJ(Max)=175°C TC=25°C Figure Maximun Forward Biased Safe Operating Area (Note 10ms 0.00001 Power TJ(Max)=175°C TC=25°C Crss Coss
1000
1000
0.001
Pulse Width Figure Single Pulse Power Rating Junction-toCase (Note
Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=1.0°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01 0.00001
Single Pulse 0.0001 0.001 0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AOB440
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
Power Dissipation Current rating ID(A) TCASE (°C) Figure Power De-rating (Note TCASE (°C) Figure Current De-rating (Note
TA=25°C ID(A), Peak Avalanche Current 0.000001
TA=150°C
0.00001
0.0001
0.001
Time avalanche, Figure Single Pulse Avalanche capability
Alpha Omega Semiconductor, Ltd.
www.aosmd.com

AOB440 uses advanced trench technology design provide excellent DS(ON)

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