AO6402A/L uses advanced trench technology provide excellent RDS(ON) ga

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AO6402A/L uses advanced trench technology provide excellent RDS(ON) ga

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AO6402A N-Channel Enhancement Mode Field Effect Transistor
AO6402A/L uses advanced trench technology provide excellent RDS(ON) gate charge. This device suitable load switch applications. source leads separated allow Kelvin connection source, which used bypass source inductance. AO6402A AO6402AL electrically identical. -RoHS Compliant -AO6402AL Halogen Free
RDS(ON) RDS(ON) 10V) (VGS 10V) (VGS 4.5V)
TSOP-6 View
Absolute Maximum Ratings A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
Maximum 1.28
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol
Steady-State Steady-State
62.5
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO6402A
Electrical Characteristics J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=7A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=5.6A Forward Transconductance Diode Forward Voltage VDS=5V, ID=7A IS=1A,VGS=0V TJ=125°C 22.5 32.5 0.75 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 11.3 VGS=10V, VDS=15V, ID=7A VGS=10V, VDS=15V, RL=2.6, RGEN=3 IF=7A, dI/dt=100A/µs 15.1 15.5 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs
value measured with device mounted 1in2 FR-4 board with 2oz. Copper, still environment with TA=25°C. value given application depends user's specific board design. current rating based thermal resistance rating. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with TA=25°C. curve provides single pulse rating. F.The current rating based thermal resistance rating. Rev1: Aug. 2008
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO6402A
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
4.5V VGS=3.5V (Volts) On-Region Characteristics Normalized On-Resistance VGS=4.5V RDS(ON) Figure On-Resistance Drain Current Gate Voltage VGS=10V Temperature (°C) Figure On-Resistance Junction Temperature VGS=10V Id=7A ID(A) VDS=5V
125°C 25°C
VGS(Volts) Figure Transfer Characteristics
VGS=4.5V Id=5.6A
ID=7A RDS(ON)
1.0E+01 1.0E+00 1.0E-01
125°C
125°C 1.0E-02
25°C THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL 1.0E-03 COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, 1.0E-04 FUNCTIONS RELIABILITY WITHOUT NOTICE. 25°C 1.0E-05 (Volts) Figure Body-Diode Characteristics
(Volts) Figure On-Resistance Gate-Source Voltage
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO6402A
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics 1000 Capacitance (pF) Ciss Coss Crss
VDS=15V ID=7A
(Volts) Figure Capacitance Characteristics
100.0 10µs 10.0 (Amps) RDS(ON) limited
TJ(Max)=150°C TA=25°C Power 100µ 10ms 0.1s 0.001
TJ(Max)=150°C TA=25°C
0.01
(Volts)
0.01
1000
Figure Maximum Forward Biased Safe Operating Area (Note
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE. Single Pulse 0.01 0.00001 0.0001 0.001 0.01 1000 Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO6402A
Gate Charge Test Circuit Waveform
Charge
Resistive Switching Test Circuit Waveforms
d(on) d(off)
Diode Recovery Test Circuit Waveforms
dI/dt
Alpha Omega Semiconductor, Ltd.
www.aosmd.com

AO6402A/L uses advanced trench technology provide excellent RDS(ON) ga

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