SRFETAO4728L uses advanced trench technology with monolithically integ

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

SRFETAO4728L uses advanced trench technology with monolithically integ

Datasheet Thumbnail

Top Searches for this datasheet

AO4728L N-Channel Enhancement Mode Field Effect Transistor
SRFETAO4728L uses advanced trench technology with monolithically integrated Schottky diode provide excellent RDS(ON),and gate charge. This device ideally suited side switch core power conversion.
Features
RDS(ON) 4.3m RDS(ON) (VGS 10V) (VGS 10V) (VGS 4.5V)
RoHS Compliant Halogen Free
100% Tested! 100% Tested!
SOIC-8
SRFETSoft Recovery MOSFET: Integrated Schottky Diode
Absolute Maximum Ratings A=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
Maximum
Units
TC=25°C TC=70°C
TSTG
Repetitive avalanche energy L=0.1mH Power Dissipation
TC=25°C TC=70°C
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol
Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4728L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=125°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=18A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 2975 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.28 VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=500A/µs
Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
TJ=125°C 3719 0.56 10.7 12.5 26.5 4463 0.84
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. power dissipation based TJ(MAX)=150°C, using junction-to-ambient thermal resistance. Repetitive rating, pulse width limited junction temperature J(MAX)=150°C. Ratings based frequency duty cycles keep initialTJ=25°C. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These curves based junction-to-ambient thermal impedence which measured with device mounted FR-4 board with 2oz. Copper, assuming maximum junction temperature J(MAX)=150°C. curve provides single pulse rating. Rev0: Nov-08 COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4728L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) On-Region Characteristics (Note RDS(ON) Figure On-Resistance Drain Current Gate Voltage (Note VGS=10V VGS=4.5V Normalized On-Resistance Temperature (°C) Figure On-Resistance Junction Temperature (Note VGS(Volts) Figure Transfer Characteristics (Note VGS=3V 4.5V 3.5V ID(A) 125°C 25°C VDS=5V
VGS=10V ID=20A
VGS=4.5V
ID=18A
ID=20A RDS(ON)
1.0E+02
1.0E+01
125°C
125°C
1.0E+00 25°C 1.0E-01
25°C
(Volts) Figure On-Resistance Gate-Source Voltage (Note
1.0E-02 (Volts) Figure Body-Diode Characteristics (Note
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4728L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=15V ID=20A Capacitance (pF) 6000 5000 4000 3000 2000 1000 (nC) Figure Gate-Charge Characteristics Crss (Volts) Figure Capacitance Characteristics Coss Ciss
(Volts)
Peak Avalanche Current (Amps) 0.000001 0.00001 0.0001 0.001 Time avalanche, Figure Single Pulse Avalanche capability (Note TA=150°C TA=125°C TA=25°C
1000.0 100.0 10.0 (Volts) Figure Maximum Forward Biased Safe Operating Area (Note
RDS(ON) limited
10µs 100µs TJ(Max)=150°C TC=25°C 10ms 100ms
TA=100°C
1000
TA=25°C
Power
0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-to-Ambient (Note
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4728L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.001 0.00001 0.0001 0.001 0.01 1000
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4728L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
1.0E-01 VDS=30V 1.0E-03 VDS=15V 1.0E-05 Temperature (°C) Figure Diode Reverse Leakage Current Junction Temperature di/dt=800A/µs (nC) Figure Diode Reverse Recovery Charge Peak Current Conduction Current (ns) Figure Diode Reverse Recovery Time Softness Factor Conduction Current di/dt=800A/µs Temperature (°C) Figure Diode Forward voltage Junction Temperature IS=1A
1.0E-02
1.0E-04
1.0E-06
(nC) Is=20A
1000
Is=20A (ns)
1000
di/dt (A/µs) Figure Diode Reverse Recovery Charge Peak Current di/dt
di/dt (A/µs) Figure Diode Reverse Recovery Time Softness Factor di/dt
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4728L
Gate Charge Test Circuit aveform
Charge
Resistive Switching Test Circuit Waveforms
d(on) d(off)
Unclamped Inductive Switching (UIS) Test Circuit Waveforms
LIAR
BVDSS
Diode Recovery Test Circuit Waveforms
dI/dt
Alpha Omega Semiconductor, Ltd.
www.aosmd.com

SRFETAO4728L uses advanced trench technology with monolithically integ

Top Searches for this datasheet

Other recent searches