AO4498L combines advanced trench MOSFET technology with resistance pac
|
|
|
Top Searches for this datasheet
AO4498L N-Channel Enhancement Mode Field Effect Transistor
AO4498L combines advanced trench MOSFET technology with resistance package provide extremely RDS(ON). This device ideal load switch battery protection applications.
RDS(ON) 5.5m RDS(ON) 7.5m (VGS 10V) (VGS 10V) (VGS 4.5V)
RoHS Compliant Halogen Free
100% Tested! 100% Tested!
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive avalanche energy L=0.1mH Power Dissipation
Maximum
Units
TC=25°C TC=70°C
TSTG
TC=25°C TC=70°C
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4498L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=18A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=16A Forward Transconductance VDS=5V, ID=18A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125°C 1910 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=18A VGS=10V, VDS=15V, RL=0.83, RGEN=3 IF=18A, dI/dt=500A/µs
36.5
Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
2300
44.5
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with =25°C. value given application depends user's specific board design. power dissipation based TJ(MAX)=150°C, using junction-to-ambient thermal resistance. Repetitive rating, pulse width limited junction temperature J(MAX)=150°C. Ratings based frequency duty cycles keep initialTJ=25°C. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These curves based junction-to-ambient thermal impedence which measured with device mounted FR-4 board with 2oz. Copper, assuming maximum junction temperature J(MAX)=150°C. curve provides single pulse rating. Jul-08 COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4498L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) On-Region Characteristics (Note RDS(ON) VGS=4.5V Figure On-Resistance Drain Current Gate Voltage (Note Normalized On-Resistance Temperature (°C) Figure On-Resistance Junction Temperature (Note VGS=10V ID=18A VGS=3.5V ID(A) VGS(Volts) Figure Transfer Characteristics (Note 125° 25°C 4.5V VDS=5V
VGS=10V
VGS=4.5V ID=16A
RDS(ON) 25°C (Volts) Figure On-Resistance Gate-Source Voltage (Note 125°C ID=18A
1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 (Volts) Figure Body-Diode Characteristics (Note 125°C 25°C
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4498L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VDS=15V ID=18A Capacitance (pF) 3000 2500 Ciss 2000 1500 1000 (nC) Figure Gate-Charge Characteristics Crss (Volts) Figure Capacitance Characteristics RDS(ON) limited 10µs 100µs 10ms 100ms Coss
(Volts)
ID(A), Peak Avalanche Current 0.000001 TA=150° TA=25°C TA=100°
1000.0 100.0
(Amps)
10.0
TA=125° 0.00001 0.0001 0.001 Time avalanche, Figure Single Pulse Avalanche capability (Note
TJ(Max)=150°C TA=25°C
(Volts) Figure Maximum Forward Biased Safe Operating Area (Note
1000
TJ(Max)=150°C TA=25°C
Power
0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-to-Ambient (Note
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4498L
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse 0.001 0.00001 0.0001 0.001 0.01 1000
0.01
Pulse Width Figure Normalized Maximum Transient Thermal Impedance (Note
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4498L
Gate Charge Test Circuit Waveform
Charge
Resistive Switching Test Circuit Waveforms
td(on) td(off) toff
Diode Recovery Test Circuit Waveforms
dI/dt
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
Other recent searches
XZFMYK14A - XZFMYK14A XZFMYK14A Datasheet
STM32F10x - STM32F10x STM32F10x Datasheet
M5482 - M5482 M5482 Datasheet
LM337 - LM337 LM337 Datasheet
EZC05DRAS - EZC05DRAS EZC05DRAS Datasheet
CY7C371i - CY7C371i CY7C371i Datasheet
CY7C372i - CY7C372i CY7C372i Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
