General Description AO4490/L uses advanced trench technology provide e

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AO4490 N-Channel Enhancement Mode Field Effect Transistor
General Description AO4490/L uses advanced trench technology provide excellent RDS(ON), gate charge operation with gate voltages 4.5V, while retaining VGS(MAX) rating. protected. This device suitable load switch general purpose applications. AO4490 AO4490L electrically identical. -RoHS Compliant -AO4490L Halogen Free
(VGS 10V) RDS(ON) 7.2m (VGS 10V) RDS(ON) (VGS 4.5V) protected Tested! Ciss,Coss,Crss Tested
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive avalanche energy L=0.3mH TA=25°C Power Dissipation TA=70°C Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Maximum
Units
TA=25°C TA=70°C TSTG
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4490
Electrical Characteristics J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=12A Forward Transconductance VDS=5V, ID=16A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±16V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=16A TJ=125°C 0.70 1803 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=16A VGS=10V, VDS=15V, RL=1, RGEN=3 IF=16A, dI/dt=100A/µs 2170 Units
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=16A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. value given application depends user's specific board design. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. curve provides single pulse rating. current rating based thermal resistance rating. ratings based frequency duty cycles such that Tj(start)=25C each pulse. Rev2: 2008
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4490
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
VGS=3.5V ID(A) (Volts) Figure On-Region Characteristics 10.0 VGS=4.5V RDS(ON) Normalized On-Resistance VGS(Volts) Figure Transfer Characteristics Figure On-Resistance Drain Current Gate Voltage Temperature (°C) Figure On-Resistance Junction Temperature VGS=10V ID=16A -40°C 125° 25°C 4.5V VDS=5V
VGS=10V
VGS=4.5V ID=12A
ID=16 RDS(ON)
1.0E+02 1.0E+01 1.0E+00 125°C 1.0E-01 1.0E-02 -40°C 1.0E-03 25°C 1.0E-04 1.0E-05 (Volts) Figure On-Resistance Gate-Source Voltage (Volts) Figure Body-Diode Characteristics 25°C 125°C
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4490
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics (Volts) Figure Capacitance Characteristics VDS=15V ID=16A Capacitance (pF) 3500 3000 2500 2000 1500 1000 Coss Crss Ciss
1000.0 10µs 100.0 10.0 0.01 100µ TJ(Max)=150°C TA=25°C Power (Amps) RDS(ON) limited 10ms
0.0001 0.001
TJ(Max)=150°C TA=25°C
(Volts)
0.01
Figure Maximum Forward Biased Safe Operating Area (Note
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75°C/W descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.01 0.00001
Single Pulse 0.0001 0.001 0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance(Note
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4490
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
TA=10S Power Dissipation
TA=Steady-State
Ambient (°C) Figure Power De-rating (Note
Alpha Omega Semiconductor, Ltd.
www.aosmd.com

General Description AO4490/L uses advanced trench technology provide e

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