General Description AO4430/L uses advanced trench technology provide e

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AO4430 N-Channel Enhancement Mode Field Effect Transistor
General Description AO4430/L uses advanced trench technology provide excellent RDS(ON), shoot-through immunity, body diode characteristics ultra-low gate resistance. This device ideally suited side switch Notebook core power conversion. AO4430 AO4430L electrically identical. -RoHS Compliant -AO4430L Halogen Free
(VGS 10V) RDS(ON) 5.5m (VGS 10V) RDS(ON) 7.5m (VGS 4.5V) 100% Tested! 100% Tested!
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Avalanche Current
Maximum
Units
TA=25°C TA=70°C TA=25°C TA=70°C TSTG
Repetitive avalanche energy 0.3mH
Junction Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead
Symbol Steady-State Steady-State
Units °C/W °C/W °C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4430
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=18A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance Diode Forward Voltage VDS=5V, ID=18A IS=1A,VGS=0V TJ=125°C 4660 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=18A 6060 0.45 VGS=10V, VDS=15V, RL=0.83, RGEN=3 IF=18A, dI/dt=100A/µs 51.5 33.5 7270 Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge tD(on) tD(off) Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/µs
value measured with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. value given application depends user's specific board design. Repetitive rating, pulse width limited junction temperature. thermal impedence from junction lead lead ambient. static characteristics Figures obtained using <300 pulses, duty cycle 0.5% max. These tests performed with device mounted FR-4 board with 2oz. Copper, still environment with A=25°C. curve provides single pulse rating. current rating based junction ambient thermal resistance rating. Rev5: 2008
THIS PRODUCT BEEN DESIGNED QUALIFIED CONSUMER MARKET. APPLICATIONS USES CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS AUTHORIZED. DOES ASSUME LIABILITY ARISING SUCH APPLICATIONS USES PRODUCTS. RESERVES RIGHT IMPROVE PRODUCT DESIGN, FUNCTIONS RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4430
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
3.5V VGS=2.5V (Volts) On-Region Characteristics VGS=4.5V RDS(ON) Temperature (°C) Figure On-Resistance Junction Temperature Figure On-Resistance Drain Current Gate Voltage VGS=10V Normalized On-Resistance ID=18A VGS=10V VGS=4.5V ID(A) 125°C 25°C VGS(Volts) Figure Transfer Characteristics 4.5V VDS=5V
3.0V
1.0E+02 1.0E+01
ID=18A RDS(ON) 125°C
1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 125°C
25°C
25°C
(Volts) Figure On-Resistance Gate-Source Voltage
1.0E-05 (Volts) Figure Body-Diode Characteristics
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4430
TYPICAL ELECTRICAL THERMAL CHARACTERISTICS
(Volts) (nC) Figure Gate-Charge Characteristics VDS=15V ID=18A Capacitance (pF) 6000 8000
Ciss
4000
2000
Crss
Coss
(Volts) Figure Capacitance Characteristics
100.0 RDS(ON) limited 10ms (Amps) 10.0 0.1s TJ(Max)=150°C TA=25°C (Volts) Figure Maximum Forward Biased Safe Operating Area (Note 100µs Power 10µs
0.001 TJ(Max)=150°C TA=25°C
0.01
1000
Pulse Width Figure Single Pulse Power Rating Junction-toAmbient (Note
Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75°C/W
descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
1000
Pulse Width Figure Normalized Maximum Transient Thermal Impedance
Alpha Omega Semiconductor, Ltd.
www.aosmd.com
AO4430
Gate Charge Test Circuit Waveform
Charge
Resistive Switching Test Circuit Waveforms
d(on) d(off)
Unclamped Inductive Switching (UIS) Test Circuit Waveforms
BVDSS
Diode Recovery Test Circuit Waveforms
dI/dt
Alpha Omega Semiconductor, Ltd.
www.aosmd.com

General Description AO4430/L uses advanced trench technology provide e

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