un.6 2005 Dual hannel nhancement Mode Field ffect Transistor
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2621
un.6 2005
Dual hannel nhancement Mode Field ffect Transistor
ODUC UMMAR
-20V
uper high dense cell design
(ON)
-4.5V -2.5V
ugged reliable. OT-26 ackage.
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OLUTE MAXIMUM ATINGS A=25 unless otherwise noted)
arameter Drain-S ource Voltage Gate-S ource Voltage Drain urrent-C ontinuous ulsed Drain-S ource Diode Forward urrent Maximum ower Dissipation Operating Junction torage Temperature ange ymbol Limit -1.25 Unit
Thermal esistance, Junction-to-Ambient
2621
ICAL CHAR ACTE TICS unless otherwise noted)
Parameter CHAR ACTE TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage (th) (ON) ID(ON) CRSS
ymbol
Condition
-250uA -16V, 10V, =-250uA -4.5V, -2.0A -2.5V, -1.0A -5V, -4.5V -5V,
Unit
-0.5 -0.8 -1.5 11.5 15.6 83.1 43.6
m-ohm m-ohm
CHAR ACTE TICS
Gate Threshold Voltage Drain-S ource On-S tate esistance On-S tate Drain Current Forward Transconductance
DYNAMIC CHAR ACTE TICS
Input Capacitance Output Capacitance everse Transfer Capacitance -20V, =1.0MH
WITCHING CHAR ACTE TICS
Turn-On Delay Time Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tD(OFF)
-10V, -1A, -4.5V,
-10V, -2A, -4.5V
2621
ICAL CHAR ACTE TICS A=25 unless otherwise noted)
Parameter
Diode Forward Voltage
ymbol
Condition
=-1.25A
Unit
-0.85 -1.2
AIN-S DIODE CHAR ACTE TICS
Notes urface Mounted Board, 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle c.Guaranteed design, subject production testing.
=10V
=4.5V
Drain urrent(A)
Drain urrent
j=125
Drain-to-S ource Voltage
ate-to-S ource Voltage
igure Output haracteris tics
igure Trans haracteris tics
=-4.5V =-2.0A
(ON) On-R tance (Normalized)
apacitance
Drain-to ource Voltage
unction emperature
igure apacitance
igure On-R tance Variation with Temperature
2621
Normalized ate-S ource hres hold oltage
=-250uA
Normalized Drain-S ource reakdown oltage
1.15 =-250uA 1.10 1.05 1.00 0.95 0.90 0.85
unction emperature
unction emperature
with emperature
igure reakdown oltage ariation with emperature
rans conductance
=-5V
ource-drain current
Drain-S ource urrent
Diode orward oltage
igure rans conductance ariation with Drain urrent
ource oltage
igure Diode orward oltage ariation with ource urrent
Drain urrent
=-4.5V =-2.0A
0.03
=-4.5V ingle ulse c=25
otal harge
Drain-S ource oltage
igure harge
igure Maximum perating Area
2621
toff
td(on)
td(off)
INVE
WIDTH
igure witching ircuit
igure witching Waveforms
Normalized Transient
Thermal Resistance
(t)=r Datas heet Duty ycle, D=t1/t2
0.05 0.02
0.01
Single Pulse 0.0001 0.001 0.01
0.01 0.00001
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
2621
2621
TSOP6 Tape Reel Data
TSOP6 Carrier Tape
3.50 0.05 1.75 0.10 +0.10 1.50 0.00
4.00 0.10 2.00 0.05
0.30
0.25 0.05
4.00 0.10
+0.10 1.00 0.00
1.50 178.0
SECTION
SECTION
TSOP6 Reel
10.6
13.5
SCALE
+1.5
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