40GHz Super Noise PHEMT Pseudomorphic High Electron Mobility Tran

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40GHz Super Noise PHEMT Pseudomorphic High Electron Mobility Tran

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EC2612
40GHz Super Noise PHEMT
Pseudomorphic High Electron Mobility Transistor Description
EC2612 based 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width 120µm 0.15µm T-shaped aluminium gate features resistance excellent reliability. device shows very high transconductance which leads very high frequency noise performances. available chip form with sources holes connection.Only gate drain wires bounding required.
Main Features
0.8dB minimum noise figure 18GHz 1.5dB minimum noise figure 40GHz 12dB associated gain 18GHz 9.5dB associated gain 40GHz Chip size 0.63 0.37
Drain Gate Source
Main Characteristics
Tamb +25°C Symbol Idss NFmin Parameter Saturated drain current Minimum noise figure (F=40GHz) Associated gain (F=40GHz) Unit
Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. DSEC26120077 -17-Mar-00 Specifications subject change without notice
United Monolithic Semiconductors S.A.S.
Route B.P.46 91401 Orsay Cedex France Tel. (0)1 (0)1
EC2612
Electrical Characteristics
Tamb +25°C Symbol Idss Parameter Saturated drain current
40GHz Super Noise PHEMT
Test Conditions 0.1mA 25mA Vgsd
Unit
Pinch voltage
-1.0
-0.7
-0.3
Transconductance
Igsd
Gate source/drain leakage current
Dynamic characteristics
Tamb=25°C Symbol Parameter Test Conditions 12GHz Minimum noise figure Vds=2V Ids=Idss/3 Associated Gain 30GHz 40GHz 12GHz 30GHz 40GHz Typ. Unit
Absolute Maximum Ratings
Tamb +25°C Symbol Tstg Parameter Drain source voltage Gate source voltage Total power dissipation Operating channel temperature Storage temperature range Values -2.5 +175 +175 Units
Operation this device above these parameters cause permanent damage
Ref. DSEC26120077 -17-Mar-00 Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
40GHz Super Noise PHEMT
Typical Scattering Parameters
Tamb +25°C Parameters, including Lg=Ld~0.15nH 30mA Freq. -0,14 -0,19 -0,35 -0,62 -0,89 -1,12 -1,39 -1,70 -1,96 -2,15 -2,34 -2,47 -2,62 -2,78 -2,91 -3,00 -3,05 -3,08 -3,13 -3,17 -3,24 -3,26 -3,30 -3,27 -3,26 -3,20 -3,17 -3,15 -3,19 -3,15 -3,10 -3,03 -2,99 -2,98 -2,97 -2,89 -2,85 -2,83 -2,82 -2,83 -11,0 -21,6 -32,3 -42,5 -52,5 -62,2 -71,9 -80,5 -88,2 -95,9 -104,1 -111,8 -118,7 -125,5 -132,8 -138,8 -144,2 -150,1 -156,5 -161,6 -166,5 -171,9 -176,7 179,3 175,8 172,0 167,4 163,5 159,2 155,1 151,2 147,7 144,1 139,8 136,5 132,3 128,2 124,9 121,6 116,9 -34,26 -28,41 -25,12 -22,92 -21,36 -20,14 -19,30 -18,69 -18,10 -17,61 -17,23 -16,88 -16,56 -16,35 -16,23 -16,11 -15,89 -15,79 -15,82 -15,77 -15,80 -15,90 -16,00 -15,96 -16,06 -16,12 -16,14 -16,16 -16,36 -16,39 -16,29 -16,37 -16,54 -16,62 -16,74 -16,88 -16,84 -16,86 -17,04 -17,11 81,5 76,1 70,0 64,0 58,1 52,2 46,4 42,0 38,0 33,5 29,4 25,8 22,1 18,7 15,4 12,9 10,0 -2,0 -4,8 -6,9 -9,8 -12,6 -14,9 -17,2 -20,0 -22,2 -23,1 -24,9 -27,5 -28,8 -30,6 -32,6 -34,5 -36,4 -39,7 -43,4 -46,0
EC2612
15,88 15,69 15,48 15,20 14,87 14,53 14,16 13,74 13,34 12,96 12,57 12,23 11,83 11,40 11,02 10,60 10,24 9,86 9,49 9,14 8,75 8,40 8,02 7,68 7,39 7,12 6,86 6,62 6,28 5,98 5,70 5,40 5,12 4,89 4,68 4,51 4,24 4,04 3,84 3,47
169,7 162,2 154,5 146,7 139,3 132,3 125,7 119,5 113,9 108,3 103,0 97,6 92,4 87,4 82,5 78,1 73,7 69,5 65,2 61,2 57,2 53,3 50,0 46,8 43,6 40,4 37,1 33,4 29,7 26,5 23,1 19,5 16,7 13,4 10,1 -0,7 -4,4 -8,6
-4,78 -4,89 -5,11 -5,39 -5,80 -6,19 -6,67 -7,07 -7,38 -7,69 -8,04 -8,30 -8,55 -8,85 -9,03 -9,20 -9,29 -9,28 -9,34 -9,38 -9,45 -9,47 -9,50 -9,43 -9,31 -9,20 -9,13 -9,06 -8,95 -8,81 -8,67 -8,59 -8,45 -8,38 -8,34 -8,26 -8,10 -7,89 -7,77 -7,71
-8,8 -18,3 -27,2 -36,0 -44,4 -53,5 -61,5 -68,5 -75,6 -83,2 -90,1 -96,9 -104,7 -111,9 -118,3 -123,8 -130,8 -137,3 -143,2 -148,9 -155,9 -160,6 -164,8 -169,2 -174,6 -177,9 177,8 173,5 168,4 166,0 161,3 155,5 152,7 150,0 145,6 141,4 138,3 133,7 129,7 127,3
Ref. DSEC26120077 -17-Mar-00
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
EC2612
Tamb +25°C Parameters, including Lg=Ld~0.15nH 10mA Freq. -0,11 -0,26 -0,45 -0,66 -0,85 -1,03 -1,20 -1,41 -1,64 -1,85 -2,04 -2,19 -2,35 -2,51 -2,66 -2,78 -2,86 -2,92 -3,00 -3,08 -3,15 -3,20 -3,23 -3,25 -3,26 -3,27 -3,27 -3,26 -3,25 -3,21 -3,18 -3,13 -3,09 -3,07 -3,03 -3,00 -2,98 -2,97 -2,94 -2,93 -10,5 -20,7 -29,8 -38,4 -47,7 -56,5 -65,7 -73,9 -81,2 -88,7 -96,7 -104,2 -111,0 -117,8 -125,3 -131,4 -136,9 -142,9 -149,4 -154,6 -159,8 -165,3 -170,4 -174,7 -178,3 177,7 173,0 169,0 164,6 160,2 156,1 152,5 148,6 144,3 140,9 136,6 132,1 128,6 125,3 120,6 -33,67 -27,77 -24,45 -22,20 -20,57 -19,27 -18,36 -17,68 -17,04 -16,49 -16,08 -15,69 -15,33 -15,09 -14,94 -14,82 -14,57 -14,47 -14,48 -14,41 -14,41 -14,50 -14,60 -14,56 -14,65 -14,71 -14,72 -14,74 -14,93 -15,00 -14,93 -15,01 -15,21 -15,27 -15,31 -15,48 -15,49 -15,53 -15,77 -15,86
40GHz Super Noise PHEMT
82,3 77,0 71,2 65,4 59,6 53,7 47,9 43,3 39,2 34,5 30,1 26,3 22,3 18,5 14,9 12,0 -0,5 -4,3 -7,5 -9,8 -12,9 -16,0 -18,5 -21,1 -24,0 -26,6 -27,9 -30,1 -33,0 -34,6 -36,7 -39,8 -42,0 -44,1 -47,7 -50,7 -53,4
13,52 13,38 13,22 13,01 12,74 12,48 12,19 11,85 11,51 11,19 10,85 10,56 10,22 9,82 9,49 9,12 8,78 8,43 8,08 7,76 7,40 7,07 6,72 6,38 6,10 5,83 5,57 5,34 5,03 4,73 4,47 4,18 3,91 3,69 3,49 3,33 3,07 2,89 2,67 2,33
170,6 163,7 156,4 149,0 141,8 135,0 128,5 122,4 116,7 111,0 105,6 100,1 94,7 89,6 84,5 79,9 75,2 70,9 66,4 62,2 58,0 54,0 50,4 47,1 43,6 40,3 36,8 33,1 29,3 26,0 22,4 18,6 15,8 12,3 -2,2 -6,0 -10,2
-4,76 -4,81 -4,99 -5,21 -5,56 -5,88 -6,29 -6,65 -6,91 -7,19 -7,53 -7,78 -8,03 -8,34 -8,49 -8,67 -8,82 -8,91 -9,02 -9,07 -9,18 -9,27 -9,29 -9,27 -9,22 -9,16 -9,08 -9,05 -8,91 -8,80 -8,67 -8,58 -8,49 -8,39 -8,30 -8,20 -8,08 -7,95 -7,86 -7,78
-7,4 -16,4 -24,5 -32,6 -40,5 -49,0 -56,6 -63,3 -70,0 -77,4 -84,0 -90,6 -98,0 -105,2 -111,6 -117,1 -124,0 -130,5 -136,3 -141,9 -149,1 -154,0 -158,4 -162,8 -168,4 -171,9 -176,3 179,2 174,0 171,5 166,5 160,6 157,5 154,9 151,3 146,8 143,3 138,6 133,6 131,3
Ref. DSEC26120077 -17-Mar-00
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
40GHz Super Noise PHEMT
EC2612
Typical results
Tamb +25°C
(Vgs=-0.2V/Step)
Vgs=0.4V
(mA)
Associated Gain (F=12GHz)
1,00 0,90
0,80
0,70
0,60
0,50 0,40
(mA)
Ref. DSEC26120077 -17-Mar-00
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
(dB)
(dB)
EC2612
40GHz Super Noise PHEMT
Associated Gain (F=40GHz)
2,40
2,20
2,00
(dB)
1,80
1,60
1,40
1,20
(mA)
Vds=2V
Associated Gain (Ids=Idss/3)
1,60 1,40 1,20
(dB)
1,00 0,80 0,60 0,40 0,20
Frequency (GHz)
Vds=2V
F=12GHz
16,00 15,00 14,00 13,00 12,00 11,00 10,00
Associated gain (dB)
10,0
12,0
14,0
16,0
18,0
Pout (dBm)
31mA
Ref. DSEC26120077 -17-Mar-00
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
Power added efficiency
(dB)
(dB)
40GHz Super Noise PHEMT
EC2612
(CHIP) Equivalent Circuit model (Drain Gate bond wires included)
backside substrate
Parameter
Unit Ohms Ohms Ohms Ohms Ohms
Value 152.54 0.13 142.6 39.57 2.83 0.11 98.14 46.84 116.8 2.83 117.01
Typical Noise Parameters Vds=2V, Ids=14mA (Drain Gate bond wires included)
FREQUENCY 5000 8000 12000 15000 20000 24000 28000 30000 32000 35000 38000 40000 42000 45000 0.26 0.356 0.492 0.595 0.762 0.892 1.01 1.07 1.137 1.223 1.307 1.362 1.415 1.493 MOD. 0.811 0.746 0.658 0.598 0.514 0.473 0.460 0.465 0.475 0.533 0.556 0.581 0.618 Ang.(°) 19.888 32.28 49.899 64.263 91.037 114.916 139.673 151.723 163.219 179.087 -166.857 -158.467 -150.795 -140.488 14.089 13.33 11.87 10.51 7.965 5.923 4.16 3.473 2.966 2.63 2.923 3.538 4.536 6.843
Ref. DSEC26120077 -17-Mar-00
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1
EC2612
40GHz Super Noise PHEMT
Chip Mechanical Data
Drain area= 60*60 Gate area 60*60 Thickness
Recommended attach
Stage temperature 300°C (minimize temp. time whenever possible) Preforms Au/Sn (80/20) Atmosphere nitrogen forming flow
Recommended bonding
very pure gold wire (thermal compression) bonder should properly grounded dimensions Source pads directly connected back face metallization through holes
Ordering Information
Chip form EC2612-99F/00
Information furnished believed accurate reliable. However United Monolithic Semiconductors S.A.S. assumes responsability consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights United Monolithic Semiconductors S.A.S. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. United Monolithic Semiconductors S.A.S. products authorised critical components life support devices systems without express written approval from United Monolithic Semiconductors S.A.S.
Ref. DSEC26120077 -17-Mar-00
Specifications subject change without notice
Route B.P.46 91401 ORSAY Cedex FRANCE Tel.: (0)1 (0)1

40GHz Super Noise PHEMT Pseudomorphic High Electron Mobility Tran

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