CoolMOS1) Power MOSFET RDSon, high VDSS Superjunction MOSFET

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CoolMOS1) Power MOSFET RDSon, high VDSS Superjunction MOSFET

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IXKK 85N60C
CoolMOS1) Power MOSFET
RDSon, high VDSS Superjunction MOSFET
VDSS ID25 RDS(on)
TO-264
E72873
MOSFET Symbol VDSS ID25 ID100 dV/dt Symbol 25°C 100°C single pulse 25°C repetitive 25°C MOSFET dV/dt ruggedness 0.480 Conditions Conditions 25°C Maximum Ratings 1800 V/ns
Features generation CoolMOS1) power MOSFET high blocking capability lowest resistance avalanche rated unclamped inductive switching (UIS) thermal resistance reduced chip thickness Applications Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS) Power factor correction (PFC) Welding Inductive heating
Characteristic Values (TVJ 25°C, unless otherwise specified) min. typ. 25°C 125°C max. ±200 0.18
RDSon VGS(th) IDSS IGSS Ciss Coss td(on) td(off) RthJC
ID100 VGS; VDSS;
CoolMOSis trademark Infineon Technologies
Pulse test, duty cycle
IXYS reserves right change limits, test conditions dimensions.
20080523a
2008 IXYS rights reserved
IXKK 85N60C
Source-Drain Diode Symbol Conditions Characteristic Values (TVJ 25°C, unless otherwise specified) min. -diF/dt A/µs; typ. max.
Component Symbol Tstg Symbol Conditions operating mounting torque Conditions Maximum Ratings -55.+150 -55.+150
Characteristic Values min. typ. max.
RthCH Weight
with heatsink compound
TO-264 Outline
INCHES .185 .209 .102 .118 .037 .055 .087 .102 .110 .126 .017 .029 1.007 1.047 .760 .799 .215 .193 .201 .088 .096 .075 .083 .000 .004 .122 .138 .240 .256 .330 .346 .155 .187 .085 .093 .243 .253
MILLIMETERS 4.70 5.31 2.59 3.00 0.94 1.40 2.21 2.59 2.79 3.20 0.43 0.74 25.58 26.59 19.30 20.29 5.46 4.90 5.10 2.24 2.44 1.90 2.10 0.00 0.10 3.10 3.51 6.10 6.50 8.38 8.79 3.94 4.75 2.16 2.36 6.43 6.17
BACK SIDE
GATE DRAIN (COLLECTOR) SOURCE (EMITTER)
NOTE: This drawing meets dimensions requirement JEDEC outlines TO-264AAexcept metal surface solder plated except trimmed area.
20080523a
IXYS reserves right change limits, test conditions dimensions.
2008 IXYS rights reserved
IXKK 85N60C
Fig. Output Characteristics Deg.
Fig. Extended Output Characteristics deg.
300s
300s
Amperes
4.5V
Amperes
Volts Fig. Output Characteristics Deg.
Volts Fig. RDS(on) Norm alized ID100 Value Junction perature
300s
300s
Amperes
4.5V
(on) Normalized
Volts Fig. RDS(on) Norm alized ID100 Value
Degrees Centigrade Fig. Drain Current Case perature
300s
(on) Normalized
Amperes
Amperes
IXYS reserves right change limits, test conditions dimensions.
Degrees Centigrade
20080523a
2008 IXYS rights reserved
IXKK 85N60C
Fig. Input ittance
Fig. Transconductance
Siemens
Amperes
Volts Fig. Source Current Source-ToDrain Voltage
350V 10mA
Amperes Fig. Gate Charge
Amperes
Volts
Volts Fig. Capacitance
100000 1MHz 0.18 0.16 0.14
nanoCoulombs Fig. Maxim Transient Therm Resistance
Capacitance
10000
(th)
0.12 0.08 0.06 0.04
1000
0.02 1000
20080523a
limits, test conditions dimensions. Volts IXYS reserves right changeDS
Pulse Width milliseconds
2008 IXYS rights reserved

CoolMOS1) Power MOSFET RDSon, high VDSS Superjunction MOSFET

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