RDS(on) 220A 3.5m TO-263 Symbol VDSS VDGR VGSM ID25 ILR
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IXTA220N04T2 IXTP220N04T2
RDS(on)
220A 3.5m
TO-263
Symbol VDSS VDGR VGSM ID25 ILRMS Tstg TSOLD Weight 1.6mm (0.062in.) from Case Plastic Body Seconds Mounting Torque TO-220 TO-263 TO-220 Test Conditions 25°C 175°C 25°C 175°C, Transient 25°C Lead Current Limit, 25°C, Pulse Width Limited 25°C 25°C 25°C Maximum Ratings +175 +175 1.13/10 Nm/lb.in. Features
Gate Source
(TAB)
TO-220
(TAB)
Drain Drain
International Standard Packages 175°C Operating Temperature High Current Handling Capability Avalanche Rated RDS(on) Advantages
Symbol Test Conditions 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) 250A VGS, 250A 20V, VDSS 150°C 10V, 50A, Notes
Characteristic Values Min. Typ. Max. ±200
Easy Mount Space Savings High Power Density
Applications
Synchronous Buck Converters High Current Switching Power
Supplies Battery Powered Electric Motors Resonant-Mode Power Supplies Electronics Ballast Application Class Audio Amplifiers
2008 IXYS CORPORATION, rights reserved
DS99918C(11/08)
IXTA220N04T2 IXTP220N04T2
Symbol Test Conditions 25°C, Unless Otherwise Specified) Ciss Coss Crss td(on) td(off) Qg(on) RthJC RthCH TO-220 0.50 10V, VDSS, ID25 Resistive Switching Times 10V, 20V, (External) 25V, 1MHz 10V, 60A, Note Characteristic Values Min. Typ. Max. 6820 1185 0.42 °C/W °C/W TO-263 (IXTA) Outline
Source-Drain Diode Symbol Test Conditions 25°C, Unless Otherwise Specified) Repetitive, Pulse Width Limited 50A, Note 110A, -di/dt 100A/s Characteristic Values Min. Typ. Max. TO-220 (IXTP) Outline
Notes: Pulse Test, 300s; Duty Cycle,
Through-Hole Packages, RDS(on) Kelvin Test Contact Location must Less from Package Body.
Pins: Gate Source Drain Drain
IXYS reserves right change limits, test conditions, dimensions.
IXYS MOSFETs IGBTs covered 4,835,592 more following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 6,306,728 6,404,065 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 6,710,405 6,759,692 7,063,975 6,710,463 6,771,478 7,071,537 7,157,338B2
IXTA220N04T2 IXTP220N04T2
Fig. Output Characteristics
Fig. Extended Output Characteristics
Amperes
Amperes
Volts
Volts
Fig. Output Characteristics
Fig. RDS(on) Normalized 110A Value Junction Temperature
RDS(on) Normalized
Amperes
220A 110A
Volts
Degrees Centigrade
Fig. RDS(on) Normalized 110A Value Drain Current
Fig. Drain Current Case Temperature
External Lead Current Limit
RDS(on) Normalized
Amperes
Amperes
Degrees Centigrade
2008 IXYS CORPORATION, rights reserved
IXTA220N04T2 IXTP220N04T2
Fig. Input Admittance
Fig. Transconductance
Siemens
Amperes
Volts
Amperes
Fig. Forward Voltage Drop Intrinsic Diode
110A 10mA
Fig. Gate Charge
Amperes
Volts
Volts
NanoCoulombs
Fig. Capacitance
100,000
Fig. Forward-Bias Safe Operating Area
1,000 RDS(on) Limit 25µs
Capacitance PicoFarads
Amperes
10,000
Ciss
External Lead Limit
100µs
Coss
1,000
Single Pulse 10ms 100ms
Crss
Volts
Volts
IXYS reserves right change limits, test conditions, dimensions.
IXYS REF: T_220N04T2(V5) 12-15-08-D
IXTA220N04T2 IXTP220N04T2
Fig. Resistive Turn-on Rise Time Junction Temperature
Fig. Resistive Turn-on Rise Time Drain Current
Nanoseconds
Nanoseconds
110A
220A
Degrees Centigrade
Amperes
Fig. Resistive Turn-on Switching Times Gate Resistance
220A, 110A
Fig. Resistive Turn-off Switching Times Junction Temperature
td(on)
td(off)
3.3,
d(on) Nanoseconds
d(off) Nanoseconds
Nanoseconds
Nanoseconds
110A 220A
Ohms
Degrees Centigrade
Fig. Resistive Turn-off Switching Times Drain Current
Fig. Resistive Turn-off Switching Times Gate Resistance
td(off)
td(off)
3.3,
d(off) Nanoseconds
d(off) Nanoseconds
Nanoseconds
Nanoseconds
110A 220A
Amperes
Ohms
2008 IXYS CORPORATION, rights reserved
IXTA220N04T2 IXTP220N04T2
Fig. Maximum Transient Thermal Impedance
1.00
(th)JC
0.10
0.01 0.00001
0.0001
0.001
0.01
Pulse Width Seconds
IXYS reserves right change limits, test conditions, dimensions.
IXYS REF: T_220N04T2(V5) 12-15-08-D
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